Datasheet > CY7C2663KV18-450BZI

CY7C2663KV18-450BZI

更新时间： 2024-11-07 19:45:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		时钟静态存储器内存集成电路
页数	文件大小	规格书
31页	556K
描述
QDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, FBGA-165

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CY7C2663KV18-450BZI 技术参数

是否Rohs认证：	不符合	生命周期：	Active
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	2.48	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	450 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e0	长度：	17 mm
内存密度：	150994944 bit	内存集成电路类型：	QDR SRAM
内存宽度：	18	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	8388608 words	字数代码：	8000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	8MX18
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	220
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大待机电流：	0.46 A
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	0.94 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead/Silver (Sn/Pb/Ag)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	30
宽度：	15 mm	Base Number Matches：	1

CY7C2663KV18-450BZI 数据手册

浏览型号CY7C2663KV18-450BZI的Datasheet PDF文件第2页

浏览型号CY7C2663KV18-450BZI的Datasheet PDF文件第3页

浏览型号CY7C2663KV18-450BZI的Datasheet PDF文件第4页

浏览型号CY7C2663KV18-450BZI的Datasheet PDF文件第5页

浏览型号CY7C2663KV18-450BZI的Datasheet PDF文件第6页

浏览型号CY7C2663KV18-450BZI的Datasheet PDF文件第7页

CY7C2663KV18/CY7C2665KV18

144-Mbit QDR^®II+ SRAM Four-Word

Burst Architecture (2.5 Cycle Read Latency) with ODT

144-Mbit QDR^®II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Features

Configurations

■ Separate independent read and write data ports

❐ Supports concurrent transactions

With Read Cycle Latency of 2.5 cycles:

CY7C2663KV18: 8M × 18

■ 550-MHz clock for high bandwidth

CY7C2665KV18: 4M × 36

■ Four-word burst for reducing address bus frequency

Functional Description

■ Double data rate (DDR) interfaces on both read and write ports

(data transferred at 1100 MHz) at 550 MHz

The CY7C2663KV18, and CY7C2665KV18 are 1.8 V

synchronous pipelined SRAMs, equipped with QDR II+

architecture. Similar to QDR II architecture, QDR II+ architecture

consists of two separate ports: the read port and the write port to

access the memory array. The read port has dedicated data

outputs to support read operations and the write port has

dedicated data inputs to support write operations. QDR II+

architecture has separate data inputs and data outputs to

completely eliminate the need to “turnaround” the data bus that

exists with common I/O devices. Each port is accessed through

a common address bus. Addresses for read and write addresses

are latched on alternate rising edges of the input (K) clock.

Accesses to the QDR II+ read and write ports are completely

independent of one another. To maximize data throughput, both

read and write ports are equipped with DDR interfaces. Each

address location is associated with four 18-bit words

(CY7C2663KV18), or 36-bit words (CY7C2665KV18) that burst

sequentially into or out of the device. Because data is transferred

into and out of the device on every rising edge of both input

clocks (K and K), memory bandwidth is maximized while

simplifying system design by eliminating bus “turn arounds”.

■ Available in 2.5-clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ Static random access memory (SRAM) uses rising edges

only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

❐ Supported for D_[x:0], BWS_[x:0], and K/K inputs

■ Single multiplexed address input bus latches address inputs

for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ Quad data rate (QDR^®) II+ operates with 2.5-cycle read latency

when DOFF is asserted high

■ OperatessimilartoQDRIdevicewith1cyclereadlatencywhen

DOFF is asserted low

These devices have an ODT feature supported for D_[x:0]

BWS_[x:0], and K/K inputs, which helps eliminate external

termination resistors, reduce cost, reduce board area, and

simplify board routing.

■ Available in × 18, and × 36 configurations

■ Full data coherency, providing most current data

[1]

■ Core V_DD= 1.8 V ± 0.1 V; I/O V_DDQ= 1.4 V to V_DD

❐ Supports both 1.5 V and 1.8 V I/O supply

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ High-speed transceiver logic (HSTL) inputs and variable drive

HSTL output buffers

■ Available in 165-ball fine-pitch ball grid array (FBGA) package

(15 ×17 ×1.4 mm)

For a complete list of related documentation, click here.

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase locked loop (PLL) for accurate data placement

Selection Guide

Description

Maximum operating frequency

Maximum operating current

550 MHz

550

1090

450 MHz Unit

450

940

MHz

× 18

× 36

1520

1290

Note

1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V

= 1.4 V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-44141 Rev. *Q

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised November 24, 2017

12 3 4 5 6 7...31

中文翻译

下载PDF

与CY7C2663KV18-450BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C2663KV18-450BZXC	INFINEON	获取价格	Synchronous SRAM
CY7C2663KV18-550BZI	INFINEON	获取价格	Synchronous SRAM
CY7C2663KV18-550BZXC	INFINEON	获取价格	Synchronous SRAM
CY7C2663KV18-550BZXI	INFINEON	获取价格	Synchronous SRAM
CY7C266-45DC	CYPRESS	获取价格	OTP ROM, 8KX8, 45ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28
CY7C266-45DI	CYPRESS	获取价格	OTP ROM, 8KX8, 45ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28
CY7C266-45DMB	ETC	获取价格	EPROM\|8KX8\|CMOS\|DIP\|28PIN\|CERAMIC
CY7C266-45LMB	ETC	获取价格	x8 EPROM
CY7C266-45PC	CYPRESS	获取价格	8Kx8 Power-Switched and Reprogrammable PROM
CY7C266-45PI	CYPRESS	获取价格	OTP ROM, 8KX8, 45ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

与CY7C2663KV18-450BZI相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

16
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

13
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

37
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

35

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C2663KV18-450BZI

CY7C2663KV18-450BZI 技术参数

CY7C2663KV18-450BZI 数据手册

与CY7C2663KV18-450BZI相关器件

与CY7C2663KV18-450BZI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C2663KV18-450BZI

CY7C2663KV18-450BZI 技术参数

CY7C2663KV18-450BZI 数据手册

与CY7C2663KV18-450BZI相关器件

与CY7C2663KV18-450BZI相关文章

您还可以找

您在本页遇到什么问题？