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CY7C199C-15ZC PDF预览

CY7C199C-15ZC

更新时间: 2024-11-30 22:25:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
12页 118K
描述
32K x 8 Static RAM

CY7C199C-15ZC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:8 X 13.40 MM, TSOP1-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
Factory Lead Time:1 week风险等级:5.59
最长访问时间:15 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:11.8 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.01 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.08 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:8 mmBase Number Matches:1

CY7C199C-15ZC 数据手册

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CY7C199C  
32K x 8 Static RAM  
1
Features  
General Description  
• Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns  
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)  
• CMOS for optimum speed/power  
• TTL–compatible Inputs and Outputs  
• Available in 28 DIP, 28 SOJ, and 28 TSOP I.  
• 2.0V Data Retention  
The CY7C199C is a high–performance CMOS Asynchronous  
SRAM organized as 32K by 8 bits that supports an  
asynchronous memory interface. The device features an  
automatic power–down feature that significantly reduces  
power consumption when deselected.  
See the Truth Table in this datasheet for a complete  
description of read and write modes.  
The CY7C199C is available in 28 DIP, 28 SOJ, and 28 TSOP  
I package(s).  
• Low CMOS standby power  
• Automated Power–down when deselected  
Logic Block Diagram  
Input Buffer  
RAM Array  
I/Ox  
CE  
WE  
OE  
Power  
Down  
Circuit  
Column Decoder  
A X  
X
Product Portfolio  
12 ns  
15 ns  
20 ns  
20  
25 ns  
25  
Unit  
ns  
Maximum Access Time  
12  
85  
15  
80  
Maximum Operating Current  
75  
75  
mA  
uA  
Maximum CMOS Standby Current  
(low power)  
500  
500  
500  
500  
Notes:  
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05408 Rev. *A  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised September 11, 2003  

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