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CY7C162-12PC PDF预览

CY7C162-12PC

更新时间: 2024-01-27 05:40:02
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 157K
描述
Standard SRAM, 16KX4, 12ns, CMOS, PDIP28, DIP-28

CY7C162-12PC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.91Is Samacsys:N
最长访问时间:12 ns其他特性:AUTOMATIC POWER-DOWN
I/O 类型:SEPARATEJESD-30 代码:R-PDIP-T28
JESD-609代码:e0长度:34.67 mm
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:4功能数量:1
端口数量:1端子数量:28
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16KX4
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:4.82 mm
最大待机电流:0.03 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.12 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

CY7C162-12PC 数据手册

 浏览型号CY7C162-12PC的Datasheet PDF文件第2页浏览型号CY7C162-12PC的Datasheet PDF文件第3页浏览型号CY7C162-12PC的Datasheet PDF文件第4页浏览型号CY7C162-12PC的Datasheet PDF文件第5页浏览型号CY7C162-12PC的Datasheet PDF文件第6页浏览型号CY7C162-12PC的Datasheet PDF文件第7页 
CY7C161  
CY7C162  
16K x 4 Static RAM  
with Separate I/O  
Easy memory expansion is provided by active LOW chip en-  
Features  
ables (CE , CE ) and three-state drivers. They have an auto-  
1
2
• High speed  
matic power-down feature, reducing the power consumption  
by 65% when deselected.  
— 15-ns  
Writing to the device is accomplished when the chip enable  
• Transparent write (7C161)  
• CMOS for optimum speed/power  
• Low active power  
(CE , CE ) and write enable (WE) inputs are both LOW. Data  
1
2
on the four input pins (I through I ) is written into the memory  
0
3
location specified on the address pins (A through A ).  
0
13  
— 633 mW  
Reading the device is accomplished by taking the chip enables  
(CE , CE ) LOW while write enable (WE) remains HIGH. Un-  
• Low standby power  
— 220 mW  
1
2
der these conditions the contents of the memory location  
specified on the address pins will appear on the four data out-  
put pins.  
• TTL compatible inputs and outputs  
• Automatic power-down when deselected  
The output pins stay in a high-impedance state when write  
enable (WE) is LOW (7C162 only), or one of the chip enables  
Functional Description  
(CE , CE ) are HIGH.  
1
2
The CY7C161 and CY7C162 are high-performance CMOS  
static RAMs organized as 16,384 by 4 bits with separate I/O.  
A die coat is used to insure alpha immunity.  
Logic Block Diagram  
Pin Configurations  
I
I
0
1
DIP  
Top View  
I
I
2
3
A
A
A
A
A
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
A
A
A
5
6
7
8
9
CC  
4
2
3
3
INPUT BUFFER  
4
2
5
A
A
1
0
A
A
A
A
I
6
10  
11  
12  
13  
A
A
A
A
A
A
0
1
O
O
0
7
I
7C161  
7C162  
3
8
I
2
2
3
1
256 x 256  
ARRAY  
O
9
3
2
1
0
4
5
10  
11  
12  
13  
14  
O
O
O
0
O
O
2
I
A
A
1
6
7
CE  
OE  
GND  
3
WE  
CE  
2
POWER  
DOWN  
COLUMN DECODER  
CE  
1
CE  
2
C162-2  
7C162 ONLY  
7C161 ONLY  
WE  
OE  
C162-1  
Selection Guide[1]  
7C161 12  
7C161 15  
7C161 20  
7C161 25  
7C161 35  
7C162 12  
7C162 15  
7C162 20  
7C162 25  
7C162 35  
Maximum Access Time (ns)  
12  
160  
15  
20  
80  
25  
70  
35  
70  
Maximum Operating Current (mA)  
Maximum Standby Current (mA)  
115  
40/20  
40/20  
40/20  
20/20  
20/20  
Shaded areas indicate preliminary information.  
Note:  
1. For military specifications, see the CY7C161A/CY7C162A datasheet.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
May 1986 – Revised March 1995  

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