Datasheet > CY7C1511V18

CY7C1511V18

更新时间： 2024-01-06 05:18:53

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
23页	371K
描述
72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture

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数据手册

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CY7C1511V18 数据手册

CY7C1511V18

CY7C1526V18

CY7C1513V18

CY7C1515V18

PRELIMINARY

72-Mbit QDR™-II SRAM 4-Word Burst

Architecture

Features

Functional Description

• Separate Independent Read and Write Data Ports

— Supports concurrent transactions

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and

CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR-II architecture. QDR-II architecture

consists of two separate ports to access the memory array.

The Read port has dedicated Data Outputs to support Read

operations and the Write Port has dedicated Data Inputs to

support Write operations. QDR-II architecture has separate

data inputs and data outputs to completely eliminate the need

to “turn-around” the data bus required with common I/O

devices. Access to each port is accomplished through a

common address bus. Addresses for Read and Write

addresses are latched on alternate rising edges of the input

(K) clock. Accesses to the QDR-II Read and Write ports are

completely independent of one another. In order to maximize

data throughput, both Read and Write ports are equipped with

Double Data Rate (DDR) interfaces. Each address location is

associated with four 8-bit words (CY7C1511V18) or 9-bit

words (CY7C1526V18) or 18-bit words (CY7C1513V18) or

36-bit words (CY7C1515V18) that burst sequentially into or

out of the device. Since data can be transferred into and out

of the device on every rising edge of both input clocks (K and

K and C and C), memory bandwidth is maximized while simpli-

fying system design by eliminating bus “turn-arounds”.

• 250-MHz Clock for High Bandwidth

• 4-Word Burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces on both Read and

Write Ports (data transferred at 500 MHz) at 250 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two output clocks (C and C) accounts for clock skew

and flight time mismatching

• Echo clocks (CQ and CQ) simplify data capture in high

speed systems

• Single multiplexed address input bus latches address

inputs for both Read and Write ports

• Separate Port Selects for depth expansion

• Synchronous internally self-timed writes

• Available in ×8,x9, ×18, and ×36 configurations

• Full data coherency providing most current data

• Core Vdd=1.8(+/-0.1V);I/O Vddq=1.4V to Vdd)

• 15 × 17 x 1.4 mm 1.0-mm pitch FBGA package, 165-ball

Depth expansion is accomplished with Port Selects for each

(11 × 15 matrix)

port. Port selects allow each port to operate independently.

• Variable drive HSTL output buffers

• JTAG 1149.1 Compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

Configurations

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

CY7C1511V18–8M x 8

CY7C1526V18–8M x 9

CY7C1513V18–4M x 18

CY7C1515V18–2M x 36

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Document #: 38-05363 Rev. *A

Revised August 11, 2004

12 3 4 5 6 7...23

中文翻译

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与CY7C1511V18相关器件

型号	品牌	获取价格	描述	数据表
CY7C1511V18_06	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-167BZC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511V18-167BZI	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-167BZXC	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-167BZXI	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-200BZC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1511V18-200BZI	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-200BZXC	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-200BZXI	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-250BZC	CYPRESS	获取价格	72-Mbit QDR⑩-II SRAM 4-Word Burst Architectur

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