Datasheet > 存储 > SRAM> CY7C1511V18-250BZC

CY7C1511V18-250BZC

更新时间： 2024-11-24 05:19:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
23页	371K
描述
72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture

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CY7C1511V18-250BZC 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.45
Is Samacsys：	N	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	250 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e0	长度：	17 mm
内存密度：	67108864 bit	内存集成电路类型：	QDR SRAM
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	8388608 words	字数代码：	8000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	8MX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	220
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.85 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	15 mm
Base Number Matches：	1

CY7C1511V18-250BZC 数据手册

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CY7C1511V18

CY7C1526V18

CY7C1513V18

CY7C1515V18

PRELIMINARY

72-Mbit QDR™-II SRAM 4-Word Burst

Architecture

Features

Functional Description

• Separate Independent Read and Write Data Ports

— Supports concurrent transactions

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and

CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR-II architecture. QDR-II architecture

consists of two separate ports to access the memory array.

The Read port has dedicated Data Outputs to support Read

operations and the Write Port has dedicated Data Inputs to

support Write operations. QDR-II architecture has separate

data inputs and data outputs to completely eliminate the need

to “turn-around” the data bus required with common I/O

devices. Access to each port is accomplished through a

common address bus. Addresses for Read and Write

addresses are latched on alternate rising edges of the input

(K) clock. Accesses to the QDR-II Read and Write ports are

completely independent of one another. In order to maximize

data throughput, both Read and Write ports are equipped with

Double Data Rate (DDR) interfaces. Each address location is

associated with four 8-bit words (CY7C1511V18) or 9-bit

words (CY7C1526V18) or 18-bit words (CY7C1513V18) or

36-bit words (CY7C1515V18) that burst sequentially into or

out of the device. Since data can be transferred into and out

of the device on every rising edge of both input clocks (K and

K and C and C), memory bandwidth is maximized while simpli-

fying system design by eliminating bus “turn-arounds”.

• 250-MHz Clock for High Bandwidth

• 4-Word Burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces on both Read and

Write Ports (data transferred at 500 MHz) at 250 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two output clocks (C and C) accounts for clock skew

and flight time mismatching

• Echo clocks (CQ and CQ) simplify data capture in high

speed systems

• Single multiplexed address input bus latches address

inputs for both Read and Write ports

• Separate Port Selects for depth expansion

• Synchronous internally self-timed writes

• Available in ×8,x9, ×18, and ×36 configurations

• Full data coherency providing most current data

• Core Vdd=1.8(+/-0.1V);I/O Vddq=1.4V to Vdd)

• 15 × 17 x 1.4 mm 1.0-mm pitch FBGA package, 165-ball

Depth expansion is accomplished with Port Selects for each

(11 × 15 matrix)

port. Port selects allow each port to operate independently.

• Variable drive HSTL output buffers

• JTAG 1149.1 Compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

Configurations

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

CY7C1511V18–8M x 8

CY7C1526V18–8M x 9

CY7C1513V18–4M x 18

CY7C1515V18–2M x 36

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Document #: 38-05363 Rev. *A

Revised August 11, 2004

12 3 4 5 6 7...23

中文翻译

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与CY7C1511V18-250BZC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1511V18-250BZI	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-250BZXC	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-250BZXI	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-278BZC	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-278BZI	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-278BZXC	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-278BZXI	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-300BZC	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-300BZI	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu
CY7C1511V18-300BZXC	CYPRESS	获取价格	72-Mbit QDR⑩- II SRAM 4-Word Burst Architectu

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