Datasheet > CY7C1480BV33-200AXC

CY7C1480BV33-200AXC

更新时间： 2024-11-24 15:17:23

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
34页	980K
描述
Synchronous SRAM

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CY7C1480BV33

CY7C1482BV33

72-Mbit (2M × 36/4M × 18)

Pipelined Sync SRAM

72-Mbit (2M

× 36/4M × 18) Pipelined Sync SRAM

Features

Functional Description

■ Supports bus operation up to 250 MHz

■ Available speed grades are 250, 200, and 167 MHz

■ Registered inputs and outputs for pipelined operation

■ 3.3 V core power supply

The CY7C1480BV33 and CY7C1482BV33 SRAM integrates

2M × 36/4M × 18 SRAM cells with advanced synchronous

peripheral circuitry and a 2-bit counter for internal burst

operation. All synchronous inputs are gated by registers

controlled by a positive-edge-triggered Clock Input (CLK). The

synchronous inputs include all addresses, all data inputs,

address-pipelining Chip Enable (CE₁), depth-expansion Chip

Enables (CE₂and CE₃), Burst Control inputs (ADSC, ADSP, and

ADV), Write Enables (BW_X, and BWE), and Global Write (GW).

Asynchronous inputs include the Output Enable (OE) and the ZZ

pin.

■ 2.5 V/3.3 V I/O operation

■ Fast clock-to-output times

❐ 3.0 ns (for 250 MHz device)

■ Provide high performance 3-1-1-1 access rate

Addresses and chip enables are registered at the rising edge of

the clock when either address strobe processor (ADSP) or

Address Strobe Controller (ADSC) are active. Subsequent burst

addresses may be internally generated as controlled by the

advance pin (ADV).

■ User selectable burst counter supporting Intel^®Pentium^®

interleaved or linear burst sequences

■ Separate processor and controller address strobes

■ Synchronous self timed writes

Address, data inputs, and write controls are registered on-chip

to initiate a self timed write cycle.This part supports byte write

operations (see sections Pin Definitions on page 6 and Truth

Table on page 9 for further details). Write cycles can be one to

two or four bytes wide as controlled by the byte write control

inputs. GW when active LOW causes all bytes to be written.

■ Asynchronous output enable

■ Single cycle chip deselect

■ CY7C1480BV33 available in JEDEC-standard Pb-free 100-pin

thin quad flat pack (TQFP), Pb-free and non Pb-free 165-ball

fine-pitch ball grid array (FBGA) package. CY7C1482BV33

available in non Pb-free 165-ball fine-pitch ball grid array

(FBGA) package

The CY7C1480BV33 and CY7C1482BV33 operates from a

+3.3 V core power supply while all outputs may operate with

either a +2.5 or +3.3 V supply. All inputs and outputs are JEDEC

standard

JESD8-5

compatible.

For

best

practices

■ IEEE 1149.1 JTAG-compatible boundary scan

■ “ZZ” sleep mode option

recommendations, refer to the Cypress application note AN1064

“SRAM System Guidelines”.

For a complete list of related documentation, click here.

Selection Guide

Description

Maximum access time

250 MHz

3.0

200 MHz

3.0

167 MHz Unit

3.4

450

120

Maximum operating current

500

Maximum CMOS standby current

120

Cypress Semiconductor Corporation

Document Number: 001-15145 Rev. *L

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised February 15, 2018

12 3 4 5 6 7...34

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与CY7C1480BV33-200AXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1480BV33-200AXI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV33-200BZC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV33-200BZI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV33-200BZXC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV33-200BZXI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV33-250AXC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV33-250AXI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV33-250BZC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480BV33-250BZI	CYPRESS	获取价格	72-Mbit (2 M x 36/4 M x 18/1 M x 72) Pipelined Sync SRAM
CY7C1480BV33-250BZI	INFINEON	获取价格	Synchronous SRAM

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