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CY7C1480V25-200BZC PDF预览

CY7C1480V25-200BZC

更新时间: 2024-09-18 05:19:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
32页 1304K
描述
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM

CY7C1480V25-200BZC 数据手册

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CY7C1480V25  
CY7C1482V25  
CY7C1486V25  
72-Mbit (2M x 36/4M x 18/1M x 72)  
Pipelined Sync SRAM  
Features  
Functional Description[1]  
• Supports bus operation up to 250 MHz  
• Available speed grades are 250, 200, and 167 MHz  
• Registered inputs and outputs for pipelined operation  
• 2.5V core power supply  
The CY7C1480V25/CY7C1482V25/CY7C1486V25 SRAM  
integrates 2M x 36/4M x 18/1M × 72 SRAM cells with  
advanced synchronous peripheral circuitry and a two-bit  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst  
Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX,  
and BWE), and Global Write (GW). Asynchronous inputs  
include the Output Enable (OE) and the ZZ pin.  
• 2.5V/1.8V IO operation  
• Fast clock-to-output time  
— 3.0 ns (for 250-MHz device)  
• Provide high-performance 3-1-1-1 access rate  
• User selectable burst counter supporting Intel®  
Pentium® interleaved or linear burst sequences  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (ADSC) is active. Subsequent burst  
addresses can be internally generated as controlled by the  
Advance pin (ADV).  
• Separate processor and controller address strobes  
• Synchronous self timed writes  
• Asynchronous output enable  
• Single cycle chip deselect  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle. This part supports Byte  
Write operations (see “Pin Definitions” on page 7 and “Truth  
Table” on page 10 for further details). Write cycles can be one  
to two or four bytes wide, as controlled by the byte write control  
inputs. When it is active LOW, GW causes all bytes to be  
written.  
• CY7C1480V25, CY7C1482V25 available in  
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and  
non-Pb-free 165-ball FBGA package. CY7C1486V25  
available in Pb-free and non-Pb-free 209-ball FBGA  
package  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZ” Sleep Mode option  
The CY7C1480V25/CY7C1482V25/CY7C1486V25 operates  
from a +2.5V core power supply while all outputs may operate  
with either a +2.5 or +1.8V supply. All inputs and outputs are  
JEDEC-standard JESD8-5-compatible.  
Selection Guide  
250 MHz  
3.0  
200 MHz  
3.0  
167 MHz  
3.4  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
450  
450  
400  
mA  
mA  
120  
120  
120  
Note  
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines at www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05282 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised April 23, 2007  
[+] Feedback  

CY7C1480V25-200BZC 替代型号

型号 品牌 替代类型 描述 数据表
CY7C1480BV25-200BZC CYPRESS

完全替代

72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM

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