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CY7C1480V25_06 PDF预览

CY7C1480V25_06

更新时间: 2024-09-18 05:19:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
31页 573K
描述
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM

CY7C1480V25_06 数据手册

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CY7C1480V25  
CY7C1482V25  
CY7C1486V25  
72-Mbit (2M x 36/4M x 18/1M x 72)  
Pipelined Sync SRAM  
Features  
Functional Description[1]  
• Supports bus operation up to 250 MHz  
The CY7C1480V25/CY7C1482V25/CY7C1486V25 SRAM  
integrates 2M x 36/4M x 18/1M × 72 SRAM cells with  
advanced synchronous peripheral circuitry and a two-bit  
• Available speed grades are 250, 200 and 167 MHz  
• Registered inputs and outputs for pipelined operation  
• 2.5V core power supply  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst  
Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX,  
and BWE), and Global Write (GW). Asynchronous inputs  
include the Output Enable (OE) and the ZZ pin.  
• 2.5V/1.8V I/O operation  
• Fast clock-to-output time  
— 3.0 ns (for 250-MHz device)  
• Provide high-performance 3-1-1-1 access rate  
User-selectable burst counter supporting Intel®  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (ADSC) are active. Subsequent  
burst addresses can be internally generated as controlled by  
the Advance pin (ADV).  
Pentium® interleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous output enable  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to two or four bytes wide as  
controlled by the byte write control inputs. GW when active  
LOW causes all bytes to be written.  
• Single Cycle Chip Deselect  
• CY7C1480V25, CY7C1482V25 available in  
JEDEC-standard lead-free 100-pin TQFP, lead-free and  
non-lead-free 165-ball FBGA package. CY7C1486V25  
available in lead-free and non-lead-free 209 ball FBGA  
package.  
The CY7C1480V25/CY7C1482V25/CY7C1486V25 operates  
from a +2.5V core power supply while all outputs may operate  
with either a +2.5 or +1.8V supply. All inputs and outputs are  
JEDEC-standard JESD8-5-compatible.  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZ” Sleep Mode Option  
Selection Guide  
250 MHz  
3.0  
200 MHz  
3.0  
167 MHz  
3.4  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
450  
450  
400  
mA  
mA  
120  
120  
120  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com  
Cypress Semiconductor Corporation  
Document #: 38-05282 Rev. *G  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised July 24, 2006  
[+] Feedback  

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