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CY7C1464AV33-200BGXI PDF预览

CY7C1464AV33-200BGXI

更新时间： 2024-11-16 05:09:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
27页 509K
描述
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL⑩ Architecture

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CY7C1464AV33-200BGXI 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：14 X 22 MM, 1.76 MM HEIGHT, LEAD FREE, FBGA-209
针数：209Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.8Is Samacsys：N
最长访问时间：3.2 ns其他特性：PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：200 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B209JESD-609代码：e1
长度：22 mm内存密度：37748736 bit
内存集成电路类型：ZBT SRAM内存宽度：72
湿度敏感等级：3功能数量：1
端子数量：209字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX72输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：BGA
封装等效代码：BGA209,11X19,40封装形状：RECTANGULAR
封装形式：GRID ARRAY并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：2.5/3.3,3.3 V
认证状态：Not Qualified座面最大高度：1.96 mm
最大待机电流：0.12 A最小待机电流：3.14 V
子类别：SRAMs最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：20
宽度：14 mmBase Number Matches：1

CY7C1464AV33-200BGXI 数据手册

 浏览型号CY7C1464AV33-200BGXI的Datasheet PDF文件第2页浏览型号CY7C1464AV33-200BGXI的Datasheet PDF文件第3页浏览型号CY7C1464AV33-200BGXI的Datasheet PDF文件第4页浏览型号CY7C1464AV33-200BGXI的Datasheet PDF文件第5页浏览型号CY7C1464AV33-200BGXI的Datasheet PDF文件第6页浏览型号CY7C1464AV33-200BGXI的Datasheet PDF文件第7页 
CY7C1460AV33  
CY7C1462AV33  
CY7C1464AV33  
36-Mbit (1M x 36/2M x 18/512K x 72)  
Pipelined SRAM with NoBL™ Architecture  
Functional Description  
Features  
• Pin-compatible and functionally equivalent to ZBT™  
• Supports 250-MHz bus operations with zero wait states  
— Available speed grades are 250, 200 and 167 MHz  
The CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 are  
3.3V, 1M x 36/2M x 18/512K x72 Synchronous pipelined burst  
SRAMs with No Bus Latency™ (NoBL™) logic, respectively.  
They are designed to support unlimited true back-to-back  
Read/Write operations with no wait states. The  
• Internally self-timed output buffer control to eliminate  
the need to use asynchronous OE  
CY7C1460AV33/CY7C1462AV33/CY7C1464AV33  
are  
equipped with the advanced (NoBL) logic required to enable  
consecutive Read/Write operations with data being trans-  
ferred on every clock cycle. This feature dramatically improves  
the throughput of data in systems that require frequent  
• Fully registered (inputs and outputs) for pipelined  
operation  
• Byte Write capability  
Write/Read  
transitions.  
The  
• 3.3V power supply  
CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 are pin  
compatible and functionally equivalent to ZBT devices.  
• 3.3V/2.5V I/O power supply  
• Fast clock-to-output times  
— 2.6 ns (for 250-MHz device)  
• Clock Enable (CEN) pin to suspend operation  
• Synchronous self-timed writes  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. All data outputs pass through  
output registers controlled by the rising edge of the clock. The  
clock input is qualified by the Clock Enable (CEN) signal,  
which when deasserted suspends operation and extends the  
previous clock cycle.  
• CY7C1460AV33, CY7C1462AV33 available in  
JEDEC-standard lead-free 100-pin TQFP, lead-free and  
non-lead-free 165-ball FBGA package. CY7C1464AV33  
available in lead-free and non-lead-free 209-ball FBGA  
package  
Write operations are controlled by the Byte Write Selects  
(BWa–BWh  
CY7C1460AV33 and BWa–BWb for CY7C1462AV33) and a  
Write Enable (WE) input. All writes are conducted with on-chip  
synchronous self-timed write circuitry.  
for  
CY7C1464AV33,  
BWa–BWd  
for  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• Burst capability—linear or interleaved burst order  
• “ZZ” Sleep Mode option and Stop Clock option  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. In order to avoid bus  
contention, the output drivers are synchronously tri-stated  
during the data portion of a write sequence.  
Logic Block Diagram-CY7C1460AV33 (1M x 36)  
ADDRESS  
REGISTER 0  
A0, A1, A  
A1  
A0  
A1'  
A0'  
D1  
D0  
Q1  
Q0  
BURST  
LOGIC  
MODE  
C
ADV/LD  
C
CLK  
CEN  
WRITE ADDRESS  
REGISTER 1  
WRITE ADDRESS  
REGISTER 2  
O
O
S
U
D
A
T
U
T
P
T
P
E
N
S
U
T
U
T
ADV/LD  
A
E
WRITE REGISTRY  
AND DATA COHERENCY  
CONTROL LOGIC  
R
E
G
I
MEMORY  
ARRAY  
B
U
F
S
T
E
E
R
I
DQs  
DQP  
DQP  
DQP  
DQP  
WRITE  
DRIVERS  
BW  
BW  
a
a
b
c
d
A
M
P
b
BW  
BW  
c
S
T
E
R
S
F
d
E
R
S
S
WE  
E
E
N
G
INPUT  
REGISTER 1  
INPUT  
REGISTER 0  
E
E
OE  
READ LOGIC  
CE1  
CE2  
CE3  
SLEEP  
CONTROL  
ZZ  
Cypress Semiconductor Corporation  
Document #: 38-05353 Rev. *D  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised June 22, 2006  
[+] Feedback  
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与CY7C1464AV33-200BGXI相关器件

型号 品牌 获取价格 描述 数据表
CY7C1464AV33-250 CYPRESS

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 		36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined
CY7C1464AV33-250BGC CYPRESS

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 		36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined
CY7C1464AV33-250BGI CYPRESS

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 		36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined
CY7C1464AV33-250BGXC CYPRESS

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 		36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined
CY7C1464AV33-250BGXI CYPRESS

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 		36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined
CY7C1464V25 ETC

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 		Memory
CY7C1464V25-167BX CYPRESS

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 		ZBT SRAM, 512KX72, 3.5ns, CMOS, PBGA209, 14 X 22 MM, 2.20 MM HEIGHT, PLASTIC, BGA-209
CY7C1464V25-200BX CYPRESS

获取价格

 		ZBT SRAM, 512KX72, 3ns, CMOS, PBGA209, 14 X 22 MM, 2.20 MM HEIGHT, PLASTIC, BGA-209
CY7C1464V25-250BX CYPRESS

获取价格

 		ZBT SRAM, 512KX72, 2.7ns, CMOS, PBGA209, 14 X 22 MM, 2.20 MM HEIGHT, PLASTIC, BGA-209
CY7C1464V25-300BX CYPRESS

获取价格

 		ZBT SRAM, 512KX72, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 2.20 MM HEIGHT, PLASTIC, BGA-209

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