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CY7C1464AV33-250BGC PDF预览

CY7C1464AV33-250BGC

更新时间： 2024-11-16 05:09:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
27页 384K
描述
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL⑩ Architecture

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中文翻译

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CY7C1464AV33-250BGC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：14 X 22 MM, 1.76 MM HEIGHT, FBGA-209
针数：209Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.91最长访问时间：2.6 ns
其他特性：PIPELINED ARCHITECTURE最大时钟频率 (fCLK)：250 MHz
I/O 类型：COMMONJESD-30 代码：R-PBGA-B209
JESD-609代码：e0长度：22 mm
内存密度：37748736 bit内存集成电路类型：ZBT SRAM
内存宽度：72功能数量：1
端子数量：209字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：512KX72输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：BGA
封装等效代码：BGA209,11X19,40封装形状：RECTANGULAR
封装形式：GRID ARRAY并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：2.5/3.3,3.3 V
认证状态：Not Qualified座面最大高度：1.96 mm
最大待机电流：0.12 A最小待机电流：3.14 V
子类别：SRAMs最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mm

CY7C1464AV33-250BGC 数据手册

 浏览型号CY7C1464AV33-250BGC的Datasheet PDF文件第2页浏览型号CY7C1464AV33-250BGC的Datasheet PDF文件第3页浏览型号CY7C1464AV33-250BGC的Datasheet PDF文件第4页浏览型号CY7C1464AV33-250BGC的Datasheet PDF文件第5页浏览型号CY7C1464AV33-250BGC的Datasheet PDF文件第6页浏览型号CY7C1464AV33-250BGC的Datasheet PDF文件第7页 
CY7C1460AV33  
CY7C1462AV33  
CY7C1464AV33  
PRELIMINARY  
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined  
SRAM with NoBL™ Architecture  
Features  
Functional Description  
• Pin-compatible and functionally equivalent to ZBT™  
• Supports 250-MHz bus operations with zero wait states  
— Available speed grades are 250, 200 and 167 MHz  
The CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 are 3.3V,  
1 Mbit x 36 / 2 Mbit x 18 / 512K x72 Synchronous pipelined burst  
SRAMs with No Bus Latency™ (NoBL™) logic, respectively. They  
are designed to support unlimited true back-to-back Read/Write  
operations with no wait states. The CY7C1460AV33/  
CY7C1462AV33/CY7C1464AV33 are equipped with the  
advanced (NoBL) logic required to enable consecutive  
Read/Write operations with data being transferred on every clock  
cycle. This feature dramatically improves the throughput of data  
in systems that require frequent Write/Read transitions.The  
• Internally self-timed output buffer control to eliminate the  
need to use asynchronous OE  
• Fully registered (inputs and outputs) for pipelined  
operation  
• Byte Write capability  
CY7C1460AV33/CY7C1462AV33/CY7C1464AV33  
compatible and functionally equivalent to ZBT devices.  
are  
pin  
• Single 3.3V power supply  
• 3.3V/2.5V I/O power supply  
• Fast clock-to-output times  
— 2.6 ns (for 250-MHz device)  
— 3.2 ns (for 200-MHz device)  
— 3.4 ns (for 167-MHz device)  
• Clock Enable (CEN) pin to suspend operation  
• Synchronous self-timed writes  
All synchronous inputs pass through input registers controlled by  
the rising edge of the clock. All data outputs pass through output  
registers controlled by the rising edge of the clock. The clock input  
is qualified by the Clock Enable (CEN) signal, which when  
deasserted suspends operation and extends the previous clock  
cycle.  
Write operations are controlled by the Byte Write Selects  
(BWa–BWh for CY7C1464AV33, BWa–BWd for CY7C1460AV33  
and BWa–BWb for CY7C1462AV33) and a Write Enable (WE)  
input. All writes are conducted with on-chip synchronous  
self-timed write circuitry.  
• CY7C1460AV33 and CY7C1462AV33 are available in  
lead-free 100-pin TQFP and 165-Ball fBGA packages;  
CY7C1464AV33 available in 209-Ball fBGA package  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. In order to avoid bus  
contention, the output drivers are synchronously tri-stated during  
the data portion of a write sequence.  
• IEEE 1149.1 JTAG Boundary Scan  
• Burst capability—linear or interleaved burst order  
• “ZZ” Sleep Mode option and Stop Clock option  
Logic Block Diagram-CY7C1460AV33 (1 Mbit x 36)  
ADDRESS  
REGISTER 0  
A0, A1, A  
A1  
A0  
A1'  
A0'  
D1  
D0  
Q1  
Q0  
BURST  
LOGIC  
MODE  
C
ADV/LD  
C
CLK  
CEN  
WRITE ADDRESS  
REGISTER 1  
WRITE ADDRESS  
REGISTER 2  
O
O
S
U
D
A
T
U
T
P
T
P
E
N
S
U
T
U
T
ADV/LD  
A
E
WRITE REGISTRY  
AND DATA COHERENCY  
CONTROL LOGIC  
R
E
G
I
MEMORY  
ARRAY  
B
U
F
S
T
E
E
R
I
DQs  
DQP  
DQP  
DQP  
DQP  
WRITE  
DRIVERS  
BW  
BW  
a
a
b
c
d
A
M
P
b
BW  
BW  
c
S
T
E
R
S
F
d
E
R
S
S
WE  
E
E
N
G
INPUT  
REGISTER 1  
INPUT  
REGISTER 0  
E
E
OE  
READ LOGIC  
CE1  
CE2  
CE3  
SLEEP  
CONTROL  
ZZ  
Cypress Semiconductor Corporation  
Document #: 38-05353 Rev. *A  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Revised November 19, 2004  
1234567...27

中文翻译

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CY7C1464V25-167BX CYPRESS

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