CY7C1460AV33
CY7C1462AV33
36-Mbit (1 M × 36/2 M × 18)
Pipelined SRAM with NoBL™ Architecture
36-Mbit (1
M × 36/2 M × 18/512 K × 72) Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
■ Pin compatible and functionally equivalent to ZBT
The CY7C1460AV33/CY7C1462AV33 are 3.3 V, 1 M × 36/2 M × 18
synchronous pipelined burst SRAMs with No Bus Latency™
(NoBL logic, respectively. They are designed to support
unlimited true back-to-back read/write operations with no wait
states. The CY7C1460AV33/CY7C1462AV33 are equipped with
the advanced (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
in systems that require frequent write/read transitions. The
CY7C1460AV33/CY7C1462AV33 are pin compatible and
functionally equivalent to ZBT devices.
■ Supports 250 MHz bus operations with zero wait states
❐ Available speed grades are 250, 200 and 167 MHz
■ Internally self timed output buffer control to eliminate the need
to use asynchronous OE
■ Fully registered (inputs and outputs) for pipelined operation
■ Byte write capability
■ 3.3 V power supply
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle.
■ 3.3 V/2.5 V I/O power supply
■ Fast clock-to-output times
❐ 2.6 ns (for 250 MHz device)
■ Clock enable (CEN) pin to suspend operation
■ Synchronous self timed writes
Write operations are controlled by the byte write selects
(BWa–BWd for CY7C1460AV33 and BWa–BWb for
CY7C1462AV33) and a write enable (WE) input. All writes are
conducted with on-chip synchronous self timed write circuitry.
■ CY7C1460AV33, CY7C1462AV33 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non
Pb-free 165-ball FBGA package.
Three synchronous chip enables (CE1, CE2, CE3) and an
asynchronous output enable (OE) provide for easy bank
selection and output tristate control. To avoid bus contention, the
output drivers are synchronously tristated during the data portion
of a write sequence.
■ IEEE 1149.1 JTAG-compatible boundary scan
■ Burst capability—linear or interleaved burst order
■ “ZZ” sleep mode option and stop clock option
Logic Block Diagram – CY7C1460AV33 (1 M × 36)
ADDRESS
REGISTER
A0, A1,
A
0
A1
A0
A1'
A0'
D1
D0
Q1
Q0
BURST
LOGIC
MODE
ADV/LD
CLK
CEN
C
C
WRITE ADDRESS
REGISTER
WRITE ADDRESS
REGISTER 2
1
O
O
S
U
D
A
T
U
T
T
P
U
T
E
N
S
P
U
T
ADV/LD
A
E
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
R
E
G
I
MEMORY
ARRAY
B
U
F
F
E
R
S
S
T
E
E
R
I
DQ s
DQ P
DQ P
DQ P
DQ P
WRITE
DRIVERS
BW
a
a
b
c
A
M
P
BW
BW
BW
b
c
S
T
E
R
S
d
d
S
WE
E
E
N
G
INPUT
REGISTER
INPUT
REGISTER 0
E
E
1
OE
READ LOGIC
CE1
CE2
CE3
SLEEP
CONTROL
ZZ
Cypress Semiconductor Corporation
Document Number: 38-05353 Rev. *I
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised March 28, 2011
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