Datasheet > CY7C1410BV18-250BZI

CY7C1410BV18-250BZI

更新时间： 2024-11-24 06:51:39

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
28页	651K
描述
36-Mbit QDR-II SRAM 2-Word Burst Architecture

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CY7C1410BV18-250BZI 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.92
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	250 MHz	I/O 类型：	SEPARATE
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e0
长度：	17 mm	内存密度：	33554432 bit
内存集成电路类型：	QDR SRAM	内存宽度：	8
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	220	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大待机电流：	0.4 A	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.62 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	15 mm

CY7C1410BV18-250BZI 数据手册

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CY7C1410BV18, CY7C1425BV18

CY7C1412BV18, CY7C1414BV18

36-Mbit QDR™-II SRAM 2-Word

Burst Architecture

Features

Configurations

■ Separate independent read and write data ports

❐ Supports concurrent transactions

CY7C1410BV18 – 4M x 8

CY7C1425BV18 – 4M x 9

CY7C1412BV18 – 2M x 18

CY7C1414BV18 – 1M x 36

■ 250 MHz clock for high bandwidth

■ 2-word burst on all accesses

Functional Description

■ DoubleDataRate(DDR)interfacesonbothreadandwriteports

(data transferred at 500 MHz) at 250 MHz

The CY7C1410BV18, CY7C1425BV18, CY7C1412BV18, and

CY7C1414BV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR-II architecture. QDR-II architecture consists

of two separate ports: the read port and the write port to access

the memory array. The read port has data outputs to support read

operations and the write port has data inputs to support write

operations. QDR-II architecture has separate data inputs and

data outputs to completely eliminate the need to “turn-around”

the data bus required with common IO devices. Access to each

port is accomplished through a common address bus. The read

address is latched on the rising edge of the K clock and the write

address is latched on the rising edge of the K clock. Accesses to

the QDR-II read and write ports are completely independent of

one another. To maximize data throughput, both read and write

ports are provided with DDR interfaces. Each address location

is associated with two 8-bit words (CY7C1410BV18), 9-bit words

(CY7C1425BV18), 18-bit words (CY7C1412BV18), or 36-bit

words (CY7C1414BV18) that burst sequentially into or out of the

device. Because data can be transferred into and out of the

device on every rising edge of both input clocks (K and K and C

and C), memory bandwidth is maximized while simplifying

system design by eliminating bus “turn-arounds.”

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Single multiplexed address input bus latches address inputs

for both read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR™-IIoperateswith1.5cyclereadlatencywhenDelayLock

Loop (DLL) is enabled

■ Operates as a QDR-I device with 1 cycle read latency in DLL

off mode

■ Available in x 8, x 9, x 18, and x 36 configurations

■ Full data coherency, providing most current data

■ Core V_DD= 1.8V (±0.1V); IO V_DDQ= 1.4V to V_DD

■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

Selection Guide

Description

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

800

700

620

800

700

620

x18

x36

850

725

650

1000

850

740

Cypress Semiconductor Corporation

Document #: 001-07036 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 16, 2008

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与CY7C1410BV18-250BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1410BV18-250BZXC	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1410BV18-250BZXI	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1410JV18	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 2-Word Burst Architectur
CY7C1410JV18_09	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1410JV18-250BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 2-Word Burst Architectur
CY7C1410JV18-250BZI	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 2-Word Burst Architectur
CY7C1410JV18-250BZXC	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 2-Word Burst Architectur
CY7C1410JV18-250BZXI	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 2-Word Burst Architectur
CY7C1410JV18-267BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 2-Word Burst Architectur
CY7C1410JV18-267BZI	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 2-Word Burst Architectur

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