Datasheet > 存储 > SRAM> CY7C1410JV18-267BZXI

CY7C1410JV18-267BZXI

更新时间： 2024-11-24 02:52:07

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
26页	630K
描述
36-Mbit QDR⑩-II SRAM 2-Word Burst Architecture

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CY7C1410JV18-267BZXI 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.84	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	267 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e1	长度：	17 mm
内存密度：	33554432 bit	内存集成电路类型：	QDR SRAM
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大待机电流：	0.375 A
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	1.33 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
宽度：	15 mm	Base Number Matches：	1

CY7C1410JV18-267BZXI 数据手册

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CY7C1410JV18, CY7C1425JV18

CY7C1412JV18, CY7C1414JV18

36-Mbit QDR™-II SRAM 2-Word

Burst Architecture

Features

Configurations

■ Separate independent read and write data ports

❐ Supports concurrent transactions

CY7C1410JV18 – 4M x 8

CY7C1425JV18 – 4M x 9

CY7C1412JV18 – 2M x 18

CY7C1414JV18 – 1M x 36

■ 267 MHz clock for high bandwidth

■ 2-word burst on all accesses

Functional Description

■ DoubleDataRate(DDR)interfacesonbothreadandwriteports

(data transferred at 534 MHz) at 267 MHz

The CY7C1410JV18, CY7C1425JV18, CY7C1412JV18, and

CY7C1414JV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR-II architecture. QDR-II architecture consists

of two separate ports: the read port and the write port to access

the memory array. The read port has data outputs to support read

operations and the write port has data inputs to support write

operations. QDR-II architecture has separate data inputs and

data outputs to completely eliminate the need to “turn-around”

the data bus required with common IO devices. Access to each

port is accomplished through a common address bus. The read

address is latched on the rising edge of the K clock and the write

address is latched on the rising edge of the K clock. Accesses to

the QDR-II read and write ports are completely independent of

one another. To maximize data throughput, both read and write

ports are provided with DDR interfaces. Each address location

is associated with two 8-bit words (CY7C1410JV18), 9-bit words

(CY7C1425JV18), 18-bit words (CY7C1412JV18), or 36-bit

words (CY7C1414JV18) that burst sequentially into or out of the

device. Because data can be transferred into and out of the

device on every rising edge of both input clocks (K and K and C

and C), memory bandwidth is maximized while simplifying

system design by eliminating bus “turn-arounds”.

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Single multiplexed address input bus latches address inputs

for both read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR™-IIoperateswith1.5cyclereadlatencywhenDelayLock

Loop (DLL) is enabled

■ Operates like a QDR-I device with 1 cycle read latency in DLL

off mode

■ Available in x8, x9, x18, and x36 configurations

■ Full data coherency, providing most current data

■ Core V_DD= 1.8V (±0.1V); IO V_DDQ= 1.4V to V_DD

■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

Selection Guide

Description

267 MHz

267

250 MHz

250

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

1330

1370

1460

1200

1230

1290

x18

x36

Cypress Semiconductor Corporation

Document #: 001-12561 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 10, 2007

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与CY7C1410JV18-267BZXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1410KV18	CYPRESS	获取价格	36-Mbit QDR? II SRAM 2-Word Burst Architecture
CY7C1410V18	CYPRESS	获取价格	36-Mbit QDR-II⑩ SRAM 2-Word Burst Architectur
CY7C1410V18-167BZC	CYPRESS	获取价格	36-Mbit QDR-II⑩ SRAM 2-Word Burst Architectur
CY7C1410V18-200BZC	CYPRESS	获取价格	36-Mbit QDR-II⑩ SRAM 2-Word Burst Architectur
CY7C1410V18-250BZC	CYPRESS	获取价格	36-Mbit QDR-II⑩ SRAM 2-Word Burst Architectur
CY7C141-15JC	CYPRESS	获取价格	1K x 8 Dual-Port Static Ram
CY7C141-15JCT	CYPRESS	获取价格	Dual-Port SRAM, 1KX8, 15ns, CMOS, PQCC52, PLASTIC, LCC-52
CY7C141-15NC	CYPRESS	获取价格	1K x 8 Dual-Port Static Ram
CY7C1411AV18	CYPRESS	获取价格	RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
CY7C1411AV18_09	CYPRESS	获取价格	36-Mbit QDR-II SRAM 4-Word Burst Architecture

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