Datasheet > 存储 > SRAM> CY7C1366B-166BG

CY7C1366B-166BG

更新时间： 2024-11-15 21:53:59

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
32页	549K
描述
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM

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CY7C1366B-166BG 数据手册

CY7C1366B

CY7C1367B

9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM

Features

Functional Description^[1]

• Supports bus operation up to 225 MHz

The CY7C1366B/CY7C1367B SRAM integrates 262,144 x 36

and 524,288 x 18 SRAM cells with advanced synchronous

peripheral circuitry and a two-bit counter for internal burst

operation. All synchronous inputs are gated by registers

controlled by a positive-edge-triggered Clock Input (CLK). The

synchronous inputs include all addresses, all data inputs,

• Available speed grades are 225, 200 and 166 MHz

• Registered inputs and outputs for pipelined operation

• Optimal for performance (Double-Cycle deselect)

— Depth expansion without wait state

• 3.3V –5% and +10% core power supply (V_DD

• 2.5V / 3.3V I/O operation

address-pipelining Chip Enable (

), depth-expansion Chip

CE₁

)

Enables (CE and

^[2]), Burst Control inputs (

CE₃

ADSC ADSP

), Write Enables (

, and

BW_X

), and Global Write

and

ADV

BWE

(

). Asynchronous inputs include the Output Enable (

)

• Fast clock-to-output times

and the ZZ pin.

— 2.8 ns (for 225-MHz device)

— 3.0 ns (for 200-MHz device)

— 3.5 ns (for 166-MHz device)

Addresses and chip enables are registered at rising edge of

clock when either Address Strobe Processor ( ) or

ADSP

) are active. Subsequent

Address Strobe Controller (

ADSC

burst addresses can be internally generated as controlled by

the Advance pin ( ).

• Provide high-performance 3-1-1-1 access rate

ADV

• User-selectable burst counter supporting Intel^

Address, data inputs, and write controls are registered on-chip

to initiate a self-timed Write cycle.This part supports Byte Write

operations (see Pin Descriptions and Truth Table for further

details). Write cycles can be one to four bytes wide as

Pentium^interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed writes

• Asynchronous output enable

controlled by the byte write control inputs.

active

LOW

This device incorporates an

causes all bytes to be written.

additional pipelined enable register which delays turning off

the output buffers an additional cycle when a deselect is

executed.This feature allows depth expansion without penal-

izing system performance.

• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA

and 165-Ball fBGA packages

• IEEE 1149.1 JTAG-Compatible Boundary Scan

• “ZZ” Sleep Mode Option

The CY7C1366B/CY7C1367B operates from a +3.3V core

power supply while all outputs operate with a +3.3V or a +2.5V

supply. All inputs and outputs are JEDEC-standard

JESD8-5-compatible.

Selection Guide

225 MHz

200 MHz

3.0

166 MHz

3.5

Unit

Maximum Access Time

Maximum Operating Current

Maximum CMOS Standby Current

2.8

250

220

180

Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.

Notes:

1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

2. CE is for TQFP and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Document #: 38-05096 Rev. *B

Revised February 23, 2004

12 3 4 5 6 7...32

中文翻译

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与CY7C1366B-166BG相关器件

型号	品牌	获取价格	描述	数据表
CY7C1366B-166BGC	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B-166BZC	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B-166BZI	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B-200AC	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B-200AI	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B-200BGC	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B-200BGI	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B-200BZC	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B-200BZI	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B-225AC	CYPRESS	获取价格	9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM

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