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CY7C1362C-166BZC PDF预览

CY7C1362C-166BZC

更新时间: 2024-11-16 05:19:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
31页 420K
描述
9-Mbit (256K x 36/512K x 18) Pipelined SRAM

CY7C1362C-166BZC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
针数:165Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.48最长访问时间:3.5 ns
其他特性:PIPELINED ARCHITECTUREI/O 类型:COMMON
JESD-30 代码:R-PBGA-B165JESD-609代码:e0
长度:15 mm内存密度:9437184 bit
内存集成电路类型:CACHE SRAM内存宽度:18
湿度敏感等级:3功能数量:1
端子数量:165字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA165,11X15,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):220电源:2.5/3.3,3.3 V
认证状态:Not Qualified座面最大高度:1.4 mm
最大待机电流:0.04 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.18 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:13 mm
Base Number Matches:1

CY7C1362C-166BZC 数据手册

 浏览型号CY7C1362C-166BZC的Datasheet PDF文件第2页浏览型号CY7C1362C-166BZC的Datasheet PDF文件第3页浏览型号CY7C1362C-166BZC的Datasheet PDF文件第4页浏览型号CY7C1362C-166BZC的Datasheet PDF文件第5页浏览型号CY7C1362C-166BZC的Datasheet PDF文件第6页浏览型号CY7C1362C-166BZC的Datasheet PDF文件第7页 
CY7C1360C  
CY7C1362C  
PRELIMINARY  
9-Mbit (256K x 36/512K x 18) Pipelined SRAM  
Features  
Functional Description[1]  
• Supports bus operation up to 250 MHz  
• Available speed grades are 250, 200, and 166 MHz  
• Registered inputs and outputs for pipelined operation  
• 3.3V core power supply  
The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36  
and 524,288 x 18 SRAM cells with advanced synchronous  
peripheral circuitry and a two-bit counter for internal burst  
operation. All synchronous inputs are gated by registers  
controlled by a positive-edge-triggered Clock Input (CLK). The  
synchronous inputs include all addresses, all data inputs,  
address-pipelining Chip Enable (CE1), depth-expansion Chip  
Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP,  
• 2.5V/3.3V I/O operation  
• Fast clock-to-output times  
ADV), Write Enables (BW , and BWE), and Global Write  
(GW). Asynchronous inputs include the Output Enable (OE)  
and the ZZ pin.  
and  
— 2.8 ns (for 250-MHz device)  
X
— 3.0 ns (for 200-MHz device)  
— 3.5 ns (for 166-MHz device)  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (ADSC) are active. Subsequent  
burst addresses can be internally generated as controlled by  
the Advance pin (ADV).  
• Provide high-performance 3-1-1-1 access rate  
User-selectable burst counter supporting Intel®  
Pentium® interleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to two or four bytes wide as  
controlled by the Byte Write control inputs. GW when active  
• Asynchronous output enable  
• Single Cycle Chip Deselect  
• Offered in Lead-Free 100-pin TQFP, 119-ball BGA and  
165-Ball fBGA packages  
LOW cause  
s all bytes to be written.  
The CY7C1360C/CY7C1362C operates from a +3.3V core  
power supply while all outputs may operate with either a +2.5  
or +3.3V supply. All inputs and outputs are JEDEC-standard  
JESD8-5-compatible.  
• TQFP Available with 3-Chip Enable and 2-Chip Enable  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZ” Sleep Mode Option  
Logic Block Diagram – CY7C1360C (256K x 36)  
A0, A1, A  
ADDRESS  
REGISTER  
2
A[1:0]  
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER  
AND  
CLR  
Q0  
LOGIC  
ADSC  
ADSP  
DQ  
BYTE  
WRITE REGISTER  
D ,DQPD  
DQ  
BYTE  
WRITE DRIVER  
D ,DQPD  
BW  
D
DQC ,DQP  
BYTE  
WRITE DRIVER  
C
DQC ,DQP  
BYTE  
WRITE REGISTER  
C
BW  
C
OUTPUT  
BUFFERS  
OUTPUT  
MEMORY  
DQ s  
SENSE  
AMPS  
ARRAY  
REGISTERS  
DQP  
DQP  
DQP  
A
DQB ,DQP  
BYTE  
WRITE DRIVER  
B
E
DQB ,DQP  
BYTE  
WRITE REGISTER  
B
B
C
BW  
BW  
B
A
DQPD  
DQ  
BYTE  
WRITE DRIVER  
A ,DQPA  
DQ  
A ,DQPA  
BYTE  
WRITE REGISTER  
BWE  
INPUT  
REGISTERS  
GW  
ENABLE  
REGISTER  
PIPELINED  
ENABLE  
CE  
CE  
CE  
1
2
3
OE  
SLEEP  
CONTROL  
ZZ  
Notes:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
2. CE is for A version of TQFP (3 Chip Enable option) and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.  
3
Cypress Semiconductor Corporation  
Document #: 38-05540 Rev. *C  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised February 23, 2005  

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