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CY7C1356CV25-166BZC PDF预览

CY7C1356CV25-166BZC

更新时间： 2024-11-08 05:19:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
28页 488K
描述
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture

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CY7C1356CV25-166BZC 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165针数：165
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.62
最长访问时间：3.5 ns其他特性：PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：166 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B165JESD-609代码：e0
长度：15 mm内存密度：9437184 bit
内存集成电路类型：ZBT SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端子数量：165字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：512KX18输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：LBGA
封装等效代码：BGA165,11X15,40封装形状：RECTANGULAR
封装形式：GRID ARRAY, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：220电源：2.5 V
认证状态：Not Qualified座面最大高度：1.4 mm
最大待机电流：0.04 A最小待机电流：2.38 V
子类别：SRAMs最大压摆率：0.18 mA
最大供电电压 (Vsup)：2.625 V最小供电电压 (Vsup)：2.375 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：13 mm
Base Number Matches：1

CY7C1356CV25-166BZC 数据手册

 浏览型号CY7C1356CV25-166BZC的Datasheet PDF文件第2页浏览型号CY7C1356CV25-166BZC的Datasheet PDF文件第3页浏览型号CY7C1356CV25-166BZC的Datasheet PDF文件第4页浏览型号CY7C1356CV25-166BZC的Datasheet PDF文件第5页浏览型号CY7C1356CV25-166BZC的Datasheet PDF文件第6页浏览型号CY7C1356CV25-166BZC的Datasheet PDF文件第7页 
CY7C1354CV25  
CY7C1356CV25  
9-Mbit (256K x 36/512K x 18)  
Pipelined SRAM with NoBL™ Architecture  
Functional Description[1]  
Features  
• Pin-compatible with and functionally equivalent to  
ZBT™  
The CY7C1354CV25 and CY7C1356CV25 are 2.5V, 256K x  
36 and 512K x 18 Synchronous pipelined burst SRAMs with  
No Bus Latency™ (NoBL™) logic, respectively. They are  
designed to support unlimited true back-to-back Read/Write  
operations with no wait states. The CY7C1354CV25 and  
CY7C1356CV25 are equipped with the advanced (NoBL) logic  
required to enable consecutive Read/Write operations with  
data being transferred on every clock cycle. This feature  
dramatically improves the throughput of data in systems that  
require frequent Write/Read transitions. The CY7C1354CV25  
and CY7C1356CV25 are pin-compatible with and functionally  
equivalent to ZBT devices.  
• Supports 250-MHz bus operations with zero wait states  
• Available speed grades are 250, 200, and 166 MHz  
• Internally self-timed output buffer control to eliminate  
the need to use asynchronous OE  
• Fully registered (inputs and outputs) for pipelined  
operation  
• Byte Write capability  
• Single 2.5V power supply (VDD  
• Fast clock-to-output times  
— 2.8 ns (for 250-MHz device)  
)
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. All data outputs pass through  
output registers controlled by the rising edge of the clock. The  
clock input is qualified by the Clock Enable (CEN) signal,  
which when deasserted suspends operation and extends the  
previous clock cycle.  
• Clock Enable (CEN) pin to suspend operation  
• Synchronous self-timed writes  
• Available in lead-free 100-Pin TQFP package, lead-free  
and non lead-free 119-Ball BGA package and 165-Ball  
FBGA package  
Write operations are controlled by the Byte Write Selects  
(BWa–BWd for CY7C1354CV25 and BWa–BWb for  
CY7C1356CV25) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self-timed write circuitry.  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• Burst capability–linear or interleaved burst order  
• “ZZ” Sleep Mode option and Stop Clock option  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. In order to avoid bus  
contention, the output drivers are synchronously tri-stated  
during the data portion of a write sequence.  
Logic Block Diagram–CY7C1354CV25 (256K x 36)  
ADDRESS  
REGISTER 0  
A0, A1, A  
A1  
A0  
A1'  
A0'  
D1  
D0  
Q1  
Q0  
BURST  
LOGIC  
MODE  
C
ADV/LD  
C
CLK  
CEN  
WRITE ADDRESS  
REGISTER 1  
WRITE ADDRESS  
REGISTER 2  
O
O
S
U
D
A
T
U
T
P
T
P
E
N
S
U
T
U
T
ADV/LD  
A
E
WRITE REGISTRY  
AND DATA COHERENCY  
CONTROL LOGIC  
R
E
G
I
MEMORY  
ARRAY  
B
U
F
S
T
E
E
R
I
DQs  
DQP  
DQP  
DQP  
DQP  
WRITE  
DRIVERS  
BW  
BW  
a
a
b
c
d
A
M
P
b
BW  
BW  
c
S
T
E
R
S
F
d
E
R
S
S
WE  
E
E
N
G
INPUT  
REGISTER 1  
INPUT  
REGISTER 0  
E
E
OE  
READ LOGIC  
CE1  
CE2  
CE3  
SLEEP  
CONTROL  
ZZ  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05537 Rev. *H  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised September 14, 2006  
[+] Feedback  
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 		9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
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 		9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture

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