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CY7C1354B-200BGI PDF预览

CY7C1354B-200BGI

更新时间： 2024-11-24 22:36:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
29页 475K
描述
9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture

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CY7C1354B-200BGI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：14 X 22 MM, 2.40 MM HEIGHT, BGA-119
针数：119Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.6Is Samacsys：N
最长访问时间：3.2 ns其他特性：PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：200 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B119JESD-609代码：e0
长度：22 mm内存密度：9437184 bit
内存集成电路类型：ZBT SRAM内存宽度：36
功能数量：1端子数量：119
字数：262144 words字数代码：256000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX36
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装等效代码：BGA119,7X17,50
封装形状：RECTANGULAR封装形式：GRID ARRAY
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：2.5/3.3,3.3 V认证状态：Not Qualified
座面最大高度：2.4 mm最大待机电流：0.035 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.22 mA最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1.27 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mmBase Number Matches：1

CY7C1354B-200BGI 数据手册

 浏览型号CY7C1354B-200BGI的Datasheet PDF文件第2页浏览型号CY7C1354B-200BGI的Datasheet PDF文件第3页浏览型号CY7C1354B-200BGI的Datasheet PDF文件第4页浏览型号CY7C1354B-200BGI的Datasheet PDF文件第5页浏览型号CY7C1354B-200BGI的Datasheet PDF文件第6页浏览型号CY7C1354B-200BGI的Datasheet PDF文件第7页 
CY7C1354B  
CY7C1356B  
9-Mb (256K x 36/512K x 18) Pipelined SRAM  
with NoBL™ Architecture  
Features  
Functional Description  
• Pin-compatible and functionally equivalent to ZBT  
• Supports 225-MHz bus operations with zero wait states  
— Available speed grades are 225, 200, and 166 MHz  
The CY7C1354B and CY7C1356B are 3.3V, 256K x 36 and  
512K x 18 Synchronous pipelined burst SRAMs with No Bus  
Latency™ (NoBL) logic, respectively. They are designed to  
support unlimited true back-to-back Read/Write operations  
with no wait states. The CY7C1354B and CY7C1356B are  
equipped with the advanced (NoBL) logic required to enable  
consecutive Read/Write operations with data being trans-  
ferred on every clock cycle. This feature dramatically improves  
the throughput of data in systems that require frequent  
Write/Read transitions. The CY7C1354B and CY7C1356B are  
pin compatible and functionally equivalent to ZBT devices.  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. All data outputs pass through  
output registers controlled by the rising edge of the clock. The  
clock input is qualified by the Clock Enable (CEN) signal,  
which when deasserted suspends operation and extends the  
previous clock cycle.  
Write operations are controlled by the Byte Write Selects  
(BWa–BWd for CY7C1354B and BWa–BWb for CY7C1356B)  
and a Write Enable (WE) input. All writes are conducted with  
on-chip synchronous self-timed write circuitry.  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output three-state control. In order to avoid bus  
contention, the output drivers are synchronously three-stated  
during the data portion of a write sequence.  
• Internally self-timed output buffer control to eliminate  
the need to use asynchronous OE  
• Fully registered (inputs and outputs) for pipelined op-  
eration  
• Byte Write capability  
• Separate VDDQ for 3.3V or 2.5V I/O  
• Single 3.3V power supply  
• Fast clock-to-output times  
— 2.8 ns (for 225-MHz device)  
— 3.2ns (for 200-MHz device)  
— 3.5 ns (for 166-MHz device)  
• Clock Enable (CEN) pin to suspend operation  
• Synchronous self-timed writes  
• Available in 100 TQFP, 119 BGA, and 165 fBGA packag-  
es  
• IEEE 1149.1 JTAG Boundary Scan  
• Burst capability–linear or interleaved burst order  
• “ZZ” Sleep Mode option and Stop Clock option  
Logic Block Diagram-CY7C1354B (256K x 36)  
ADDRESS  
REGISTER 0  
A0, A1, A  
A1  
A0  
A1'  
A0'  
D1  
D0  
Q1  
Q0  
BURST  
LOGIC  
MODE  
C
ADV/LD  
C
CLK  
CEN  
WRITE ADDRESS  
REGISTER 1  
WRITE ADDRESS  
REGISTER 2  
O
O
S
U
D
A
T
U
T
P
T
P
E
N
S
U
T
U
T
ADV/LD  
A
E
WRITE REGISTRY  
AND DATA COHERENCY  
CONTROL LOGIC  
R
E
G
I
MEMORY  
ARRAY  
B
U
F
S
T
E
E
R
I
DQs  
DQP  
DQP  
DQP  
DQP  
WRITE  
DRIVERS  
BW  
BW  
a
a
b
c
d
A
M
P
b
BW  
BW  
c
S
T
E
R
S
F
d
E
R
S
S
WE  
E
E
N
G
INPUT  
REGISTER 1  
INPUT  
REGISTER 0  
E
E
OE  
READ LOGIC  
CE1  
CE2  
CE3  
SLEEP  
CONTROL  
ZZ  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Document #: 38-05114 Rev. *C  
Revised June 16, 2004  
1234567...29

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与CY7C1354B-200BGI相关器件

型号 品牌 获取价格 描述 数据表
CY7C1354B-200BZC CYPRESS

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 		9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1354B-200BZI CYPRESS

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 		9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1354B-225AC CYPRESS

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 		9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1354B-225AI CYPRESS

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 		9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1354B-225BGC CYPRESS

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 		9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1354B-225BGI CYPRESS

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 		9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1354B-225BZC CYPRESS

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 		9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1354B-225BZI CYPRESS

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 		9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
CY7C1354B-250BGC CYPRESS

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 		ZBT SRAM, 256KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119
CY7C1354B-250BZC CYPRESS

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 		ZBT SRAM, 256KX36, 2.6ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165

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