Datasheet > 存储 > SRAM> CY7C1315CV18-250BZI

CY7C1315CV18-250BZI

更新时间： 2024-11-16 05:19:07

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
31页	695K
描述
18-Mbit QDR⑩-II SRAM 4-Word Burst Architecture

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技术参数
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CY7C1315CV18-250BZI 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
针数：	165	Reach Compliance Code：	not_compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	8.78	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	250 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
长度：	15 mm	内存密度：	18874368 bit
内存集成电路类型：	QDR SRAM	内存宽度：	36
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	524288 words
字数代码：	512000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	512KX36	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大待机电流：	0.325 A
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	0.83 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
宽度：	13 mm

CY7C1315CV18-250BZI 数据手册

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CY7C1311CV18, CY7C1911CV18

CY7C1313CV18, CY7C1315CV18

18-Mbit QDR™-II SRAM 4-Word

Burst Architecture

Features

Configurations

■ Separate independent read and write data ports

❐ Supports concurrent transactions

CY7C1311CV18 – 2M x 8

CY7C1911CV18 – 2M x 9

CY7C1313CV18 – 1M x 18

CY7C1315CV18 – 512K x 36

■ 300 MHz clock for high bandwidth

■ 4-word burst for reducing address bus frequency

Functional Description

■ DoubleDataRate(DDR)interfacesonbothreadandwriteports

(data transferred at 600 MHz) at 300 MHz

The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and

CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR™-II architecture. QDR-II architecture

consists of two separate ports: the read port and the write port to

access the memory array. The read port has dedicated data

outputs to support read operations and the write port has

dedicated data inputs to support write operations. QDR-II

architecture has separate data inputs and data outputs to

completely eliminate the need to “turn-around” the data bus

required with common IO devices. Access to each port is

accomplished through a common address bus. Addresses for

read and write addresses are latched on alternate rising edges

of the input (K) clock. Accesses to the QDR-II read and write

ports are completely independent of one another. In order to

maximize data throughput, both read and write ports are

provided with DDR interfaces. Each address location is

associated with four 8-bit words (CY7C1311CV18) or 9-bit words

(CY7C1911CV18) or 18-bit words (CY7C1313CV18) or 36-bit

words (CY7C1315CV18) that burst sequentially into or out of the

device. Because data can be transferred into and out of the

device on every rising edge of both input clocks (K and K and C

and C), memory bandwidth is maximized while simplifying

system design by eliminating bus “turn-arounds”.

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Single multiplexed address input bus latches address inputs

for both read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR™-II operates with 1.5 cycle read latency when the Delay

Lock Loop (DLL) is enabled

■ Operates as a QDR-I device with 1 cycle read latency in DLL

off mode

■ Available in x 8, x 9, x 18, and x 36 configurations

■ Full data coherency, providing most current data

■ Core V_DD= 1.8 (±0.1V); IO V_DDQ= 1.4V to V_DD

■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

Selection Guide

300 MHz

300

278 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

278

720

730

760

910

765

665

560

495

800

675

570

490

x18

x36

840

705

590

505

985

830

675

570

Cypress Semiconductor Corporation

Document Number: 001-07165 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 26, 2007

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CY7C1315CV18-250BZI 替代型号

型号	品牌	替代类型	描述	数据表
CY7C1315CV18-250BZXC	CYPRESS	类似代替	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-250BZC	CYPRESS	类似代替	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur

与CY7C1315CV18-250BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1315CV18-250BZXC	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-250BZXI	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-278BZC	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-278BZI	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-278BZXC	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-278BZXI	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-300BZC	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-300BZI	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-300BZXC	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1315CV18-300BZXI	CYPRESS	获取价格	18-Mbit QDR⑩-II SRAM 4-Word Burst Architectur

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