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CY7C1297F PDF预览

CY7C1297F

更新时间: 2024-02-24 21:08:10
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
15页 441K
描述
1-Mbit (64K x 18) Flow-Through Sync SRAM

CY7C1297F 数据手册

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CY7C1297F  
1-Mbit (64K x 18) Flow-Through Sync SRAM  
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the  
first address in a burst and increments the address automati-  
cally for the rest of the burst access. All synchronous inputs  
are gated by registers controlled by a positive-edge-triggered  
Features  
• 64K x 18 common I/O  
• 3.3V –5% and +10% core power supply (VDD  
• 3.3V I/O supply (VDDQ  
• Fast clock-to-output times  
— 6.5 ns (133-MHz version)  
— 7.5 ns (117-MHz version)  
)
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst  
Control inputs (ADSC, ADSP, and ADV), Write Enables  
(BW[A:B], and BWE), and Global Write (GW). Asynchronous  
inputs include the Output Enable (OE) and the ZZ pin.  
)
• Provide high-performance 2-1-1-1 access rate  
The CY7C1297F allows either interleaved or linear burst  
sequences, selected by the MODE input pin. A HIGH selects  
an interleaved burst sequence, while a LOW selects a linear  
burst sequence. Burst accesses can be initiated with the  
Processor Address Strobe (ADSP) or the cache Controller  
Address Strobe (ADSC) inputs. Address advancement is  
controlled by the Address Advancement (ADV) input.  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (ADSC) are active. Subsequent  
burst addresses can be internally generated as controlled by  
the Advance pin (ADV).  
• User-selectable burst counter supporting Intel  
Pentiuminterleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed write  
• Asynchronous output enable  
• Supports 3.3V I/O level  
• Offered in JEDEC-standard 100-pin TQFP  
• “ZZ” Sleep Mode option  
Functional Description[1]  
The CY7C1297F is a 131,072 x 18 synchronous cache RAM  
designed to interface with high-speed microprocessors with  
minimum glue logic. Maximum access delay from clock rise is  
The CY7C1297F operates from a +3.3V core power supply  
while all outputs may operate with either a +3.3V supply. All  
inputs and outputs are JEDEC-standard JESD8-5-compatible.  
Logic Block Diagram  
ADDRESS  
REGISTER  
A0,A1,A  
A[1:0]  
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER AND  
LOGIC  
CLR  
Q0  
ADSC  
ADSP  
DQ  
B,DQPB  
DQ  
B,DQPB  
WRITE DRIVER  
WRITE REGISTER  
BW  
B
A
MEMORY  
ARRAY  
OUTPUT  
BUFFERS  
DQs  
DQP  
DQP  
SENSE  
AMPS  
A
B
DQ  
A,DQPA  
DQA,DQPA  
WRITE REGISTER  
WRITE DRIVER  
BW  
BWE  
GW  
INPUT  
REGISTERS  
ENABLE  
REGISTER  
CE  
CE  
CE  
1
2
3
OE  
SLEEP  
CONTROL  
ZZ  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05429 Rev. *B  
Revised December 21, 2004  

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