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CY7C1231H-133AXI PDF预览

CY7C1231H-133AXI

更新时间: 2024-11-09 02:58:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
12页 533K
描述
2-Mbit (128K x 18) Flow-Through SRAM with NoBL⑩ Architecture

CY7C1231H-133AXI 数据手册

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CY7C1231H  
2-Mbit (128K x 18) Flow-Through SRAM  
with NoBL™ Architecture  
Functional Description[1]  
Features  
• Can support up to 133-MHz bus operations with zero  
wait states  
The CY7C1231H is a 3.3V/2.5V, 128K x 18 Synchronous  
Flow-through Burst SRAM designed specifically to support  
unlimited true back-to-back Read/Write operations without the  
insertion of wait states. The CY7C1231H is equipped with the  
advanced No Bus Latency™ (NoBL™) logic required to  
enable consecutive Read/Write operations with data being  
transferred on every clock cycle. This feature dramatically  
improves the throughput of data through the SRAM, especially  
in systems that require frequent Write-Read transitions.  
— Data is transferred on every clock  
• Pin compatible and functionally equivalent to ZBT™  
devices  
• Internally self-timed output buffer control to eliminate  
the need to use OE  
• Registered inputs for flow-through operation  
• Byte Write capability  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. The clock input is qualified by  
the Clock Enable (CEN) signal, which when deasserted  
suspends operation and extends the previous clock cycle.  
Maximum access delay from the clock rise is 6.5 ns (133-MHz  
device).  
• 128K x 18 common I/O architecture  
• 3.3V core power supply  
• 3.3V/2.5V I/O operation  
• Fast clock-to-output times  
Write operations are controlled by the two Byte Write Select  
(BW[A:B]) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self-timed write circuitry.  
— 6.5 ns (133-MHz device)  
• Clock Enable (CEN) pin to suspend operation  
• Synchronous self-timed write  
• Asynchronous Output Enable  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. In order to avoid bus  
contention, the output drivers are synchronously tri-stated  
during the data portion of a write sequence.  
• Offered in JEDEC-standard lead-free 100-pin TQFP  
package  
• Burst Capability—linear or interleaved burst order  
• Low standby power  
Logic Block Diagram  
ADDRESS  
REGISTER  
A0, A1, A  
A1  
A1'  
A0'  
D1  
A0  
Q1  
Q0  
D0  
MODE  
BURST  
LOGIC  
CE  
ADV/LD  
C
CLK  
CEN  
C
WRITE ADDRESS  
REGISTER  
O
U
T
P
U
T
D
A
T
S
E
N
S
ADV/LD  
A
B
U
F
MEMORY  
ARRAY  
BW  
A
WRITE  
DRIVERS  
E
WRITE REGISTRY  
AND DATA COHERENCY  
CONTROL LOGIC  
S
T
E
E
R
I
DQs  
DQP  
DQP  
BW  
B
A
B
A
M
P
F
E
R
S
S
WE  
E
N
G
INPUT  
REGISTER  
E
OE  
READ LOGIC  
CE  
CE  
CE  
1
2
3
SLEEP  
CONTROL  
ZZ  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 001-00207 Rev. *B  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised April 26, 2006  
[+] Feedback  

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