Datasheet > CY7C1166V18-375BZXI

CY7C1166V18-375BZXI

更新时间： 2024-11-07 19:47:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		时钟双倍数据速率静态存储器内存集成电路
页数	文件大小	规格书
27页	648K
描述
DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CY7C1166V18-375BZXI 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.84	Is Samacsys：	N
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	375 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	15 mm	内存密度：	16777216 bit
内存集成电路类型：	DDR SRAM	内存宽度：	8
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	2097152 words
字数代码：	2000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	2MX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	1.5/1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大待机电流：	0.29 A	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	1.02 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	30	宽度：	13 mm
Base Number Matches：	1

CY7C1166V18-375BZXI 数据手册

浏览型号CY7C1166V18-375BZXI的Datasheet PDF文件第2页

浏览型号CY7C1166V18-375BZXI的Datasheet PDF文件第3页

浏览型号CY7C1166V18-375BZXI的Datasheet PDF文件第4页

浏览型号CY7C1166V18-375BZXI的Datasheet PDF文件第5页

浏览型号CY7C1166V18-375BZXI的Datasheet PDF文件第6页

浏览型号CY7C1166V18-375BZXI的Datasheet PDF文件第7页

CY7C1166V18, CY7C1177V18

CY7C1168V18, CY7C1170V18

18-Mbit DDR-II+ SRAM 2-Word Burst

Architecture (2.5 Cycle Read Latency)

Features

Functional Description

■ 18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

■ 300 MHz to 400 MHz clock for high bandwidth

■ 2-Word burst for reducing address bus frequency

The CY7C1166V18, CY7C1177V18, CY7C1168V18, and

CY7C1170V18 are 1.8V Synchronous Pipelined SRAMs

equipped with DDR-II+ architecture. The DDR-II+ consists of an

SRAM core with an advanced synchronous peripheral circuitry.

Addresses for read and write are latched on alternate rising

edges of the input (K) clock. Write data is registered on the rising

edges of both K and K. Read data is driven on the rising edges

of K and K. Each address location is associated with two 8-bit

words (CY7C1166V18), or 9-bit words (CY7C1177V18), or 18-bit

words (CY7C1168V18), or 36-bit words (CY7C1170V18) that

burst sequentially into or out of the device.

■ Double Data Rate (DDR) interfaces

(data transferred at 800 MHz) at 400 MHz

■ Read latency of 2.5 clock cycles

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

Asynchronous inputs include output impedance matching input

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

(ZQ). Synchronous data outputs (Q, sharing the same physical

pins as the data inputs D) are tightly matched to the two output

echo clocks CQ/CQ, eliminating the need for separately

capturing data from each individual DDR SRAM in the system

design.

■ Data valid pin (QVLD) to indicate valid data on the output

■ Synchronous internally self-timed writes

[1]

■ Core V_DD= 1.8V ± 0.1V; IO V_DDQ= 1.4V to V_DD

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ HSTL inputs and Variable drive HSTL output buffers

■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1-compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

Configurations

With Read Cycle Latency of 2.5 cycles:

CY7C1166V18 – 2M x 8

CY7C1177V18 – 2M x 9

CY7C1168V18 – 1M x 18

CY7C1170V18 – 512K x 36

Selection Guide

Description

400 MHz

400

375 MHz

375

333 MHz

333

300 MHz

300

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

1080

1020

920

850

Note

1. The QDR consortium specification for V

is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting

DDQ

= 1.4V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-06620 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 06, 2008

[+] Feedback

12 3 4 5 6 7...27

中文翻译

下载PDF

与CY7C1166V18-375BZXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1166V18-400BZC	CYPRESS	获取价格	DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
CY7C1166V18-400BZI	CYPRESS	获取价格	DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
CY7C1166V18-400BZXI	CYPRESS	获取价格	DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA
CY7C11681KV18	CYPRESS	获取价格	18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C11681KV18-400BZC	CYPRESS	获取价格	18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C11681KV18-450BZC	CYPRESS	获取价格	18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C11681KV18-450BZXC	CYPRESS	获取价格	18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1168KV18	CYPRESS	获取价格	18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1168KV18-400BZC	CYPRESS	获取价格	18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1168KV18-400BZXC	CYPRESS	获取价格	18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

与CY7C1166V18-375BZXI相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

16
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

13
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

37
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

34

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1166V18-375BZXI

CY7C1166V18-375BZXI 技术参数

CY7C1166V18-375BZXI 数据手册

与CY7C1166V18-375BZXI相关器件

与CY7C1166V18-375BZXI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1166V18-375BZXI

CY7C1166V18-375BZXI 技术参数

CY7C1166V18-375BZXI 数据手册

与CY7C1166V18-375BZXI相关器件

与CY7C1166V18-375BZXI相关文章

您还可以找

您在本页遇到什么问题？