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CY7C1049BNV33-15ZC PDF预览

CY7C1049BNV33-15ZC

更新时间： 2024-11-07 03:22:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
8页 420K
描述
512K x 8 Static RAM

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CY7C1049BNV33-15ZC 数据手册

 浏览型号CY7C1049BNV33-15ZC的Datasheet PDF文件第2页浏览型号CY7C1049BNV33-15ZC的Datasheet PDF文件第3页浏览型号CY7C1049BNV33-15ZC的Datasheet PDF文件第4页浏览型号CY7C1049BNV33-15ZC的Datasheet PDF文件第5页浏览型号CY7C1049BNV33-15ZC的Datasheet PDF文件第6页浏览型号CY7C1049BNV33-15ZC的Datasheet PDF文件第7页 
CY7C1049BNV33  
512K x 8 Static RAM  
Features  
Functional Description[1]  
• High speed  
The CY7C1049BNV33 is a high-performance CMOS Static  
RAM organized as 524,288 words by 8 bits. Easy memory  
expansion is provided by an active LOW Chip Enable (CE), an  
active LOW Output Enable (OE), and three-state drivers.  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O  
pins (I/O0 through I/O7) is then written into the location  
specified on the address pins (A0 through A18).  
— tAA = 12 ns  
• Low active power  
— 504 mW (max.)  
• Low CMOS standby power (Commercial L version)  
— 1.8 mW (max.)  
• 2.0V Data Retention (660 µW at 2.0V retention)  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the I/O pins.  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
The CY7C1049BNV33 is available in a standard 400-mil-wide  
36-pin SOJ and 44-pin TSOPII packages with center power  
and ground (revolutionary) pinout.  
Logic Block Diagram  
Pin Configuration  
TSOP  
SOJ  
Top View  
Top View  
A
A
36  
35  
34  
33  
1
2
3
4
5
6
7
8
9
44  
NC  
NC  
NC  
1
0
1
NC  
NC  
43  
42  
41  
40  
39  
38  
2
3
4
5
6
A
A
A
A
18  
17  
16  
15  
NC  
A
0
A
2
A
A
1
18  
A
A
3
4
A
A
2
17  
32  
I/O0  
A
A
16  
3
INPUTBUFFER  
CE  
31  
30  
29  
28  
OE  
I/O  
A
A
4
CE  
7
15  
A0  
A1  
A2  
A3  
A4  
37  
36  
35  
34  
33  
I/O1  
I/O2  
I/O  
8
OE  
I/O  
0
1
7
I/O  
9
0
I/O  
I/O  
V
7
6
10  
11  
12  
13  
I/O  
V
SS  
I/O  
1
CC  
6
GND  
CC  
V
SS  
27  
26  
25  
GND  
I/O  
I/O3  
10  
11  
12  
13  
A5  
A6  
A7  
A8  
A9  
V
I/O3  
I/O4  
I/O5  
CC  
V
V
512K x 8  
ARRAY  
CC  
I/O  
32  
I/O  
I/O  
5
2
2
5
4
I/O  
31  
30  
29  
28  
I/O  
A
I/O  
14  
15  
16  
17  
18  
19  
20  
4
3
WE  
WE  
14  
24  
23  
22  
21  
20  
19  
A
14  
A10  
A
A
13  
5
A
A
A
A
A
14  
15  
16  
17  
18  
13  
5
A
12  
A
6
A
A
12  
A
6
I/O6  
I/O7  
27  
26  
25  
11  
7
POWER  
DOWN  
COLUMN  
A
A
CE  
A
10  
NC  
7
11  
8
9
DECODER  
A
A
8
10  
WE  
NC  
NC  
NC 21  
24  
23  
A
NC  
9
22  
NC  
OE  
Cypress Semiconductor Corporation  
Document #: 001-06432 Rev. **  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised February 1, 2006  
[+] Feedback  
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