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CY7C1049BV33 PDF预览

CY7C1049BV33

更新时间： 2024-11-07 05:19:03
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 167K
描述
512K x 8 Static RAM

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CY7C1049BV33 数据手册

 浏览型号CY7C1049BV33的Datasheet PDF文件第2页浏览型号CY7C1049BV33的Datasheet PDF文件第3页浏览型号CY7C1049BV33的Datasheet PDF文件第4页浏览型号CY7C1049BV33的Datasheet PDF文件第5页浏览型号CY7C1049BV33的Datasheet PDF文件第6页浏览型号CY7C1049BV33的Datasheet PDF文件第7页 
049BV33  
CY7C1049BV33  
512K x 8 Static RAM  
expansion is provided by an active LOW Chip Enable (CE), an  
active LOW Output Enable (OE), and three-state drivers. Writ-  
ing to the device is accomplished by taking Chip Enable (CE)  
and Write Enable (WE) inputs LOW. Data on the eight I/O pins  
(I/O0 through I/O7) is then written into the location specified on  
the address pins (A0 through A18).  
Features  
• High speed  
— tAA = 15 ns  
• Low active power  
— 504 mW (max.)  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the I/O pins.  
• Low CMOS standby power (Commercial L version)  
— 1.8 mW (max.)  
• 2.0V Data Retention (660 µW at 2.0V retention)  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
Functional Description[1]  
The CY7C1049BV33 is available in a standard 400-mil-wide  
36-pin SOJ and 44-pin TSOPII packages with center power  
and ground (revolutionary) pinout.  
The CY7C1049BV33 is a high-performance CMOS Static  
RAM organized as 524,288 words by 8 bits. Easy memory  
Logic Block Diagram  
Pin Configuration  
SOJ  
TSOP II  
Top View  
Top View  
A
A
36  
35  
34  
33  
1
2
3
4
5
6
7
8
9
44  
NC  
NC  
NC  
1
0
1
NC  
NC  
43  
42  
41  
40  
39  
38  
2
3
4
5
6
A
A
A
A
18  
17  
16  
15  
NC  
A
0
A
2
A
A18  
1
A
A
3
4
A
17  
A
2
32  
I/O0  
A
16  
A
3
INPUT BUFFER  
CE  
31  
30  
29  
28  
OE  
I/O  
A
15  
A
7
4
A0  
A1  
A2  
A3  
A4  
37  
36  
35  
34  
33  
I/O1  
I/O  
CE  
OE  
I/O  
8
0
1
7
I/O  
9
0
I/O  
I/O  
V
7
6
I/O2  
10  
11  
12  
I/O  
V
SS  
I/O  
1
CC  
6
GND  
CC  
V
SS  
27  
26  
25  
GND  
I/O  
I/O3  
10  
11  
12  
13  
A5  
V
I/O3  
I/O4  
I/O5  
CC  
V
V
512K x 8  
ARRAY  
CC  
A6  
I/O  
32  
I/O  
I/O  
2
5
13  
14  
2
5
4
A7  
A8  
A9  
I/O  
I/O  
A
31  
30  
29  
28  
I/O  
4
3
WE 15  
WE  
24  
23  
22  
21  
20  
19  
14  
A
14  
A10  
A
A
A
16  
17  
18  
19  
20  
A
13  
12  
11  
5
A
A
A
A
A
14  
15  
16  
17  
18  
13  
5
A
6
A
A
12  
6
27  
26  
25  
I/O6  
I/O7  
7
POWER  
DOWN  
COLUMN  
DECODER  
A
A
CE  
A
7
11  
10  
8
9
A
NC  
NC  
NC  
A
8
10  
WE  
NC 21  
24  
23  
A
NC  
9
22  
NC  
OE  
Selection Guide  
-12  
-15  
-17  
17  
-20  
-25  
Maximum Access Time (ns)  
12  
15  
180  
200  
8
20  
25  
150  
170  
8
Maximum Operating Current (mA) Comm’l  
Ind’l  
200  
220  
8
170  
180  
8
160  
170  
8
Maximum CMOS Standby  
Current (mA)  
Com’l/Ind’l  
Com’l  
L
0.5  
0.5  
0.5  
0.5  
0.5  
Note:  
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05139 Rev. *A  
Revised September 13, 2002  
1234567...10

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