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CY22E016L-SZ25XCT PDF预览

CY22E016L-SZ25XCT

更新时间: 2024-11-05 02:56:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
14页 757K
描述
16-Kbit (2K x 8) nvSRAM

CY22E016L-SZ25XCT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.26Is Samacsys:N
最长访问时间:25 nsJESD-30 代码:R-PDSO-G28
JESD-609代码:e4长度:17.905 mm
内存密度:16384 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:2.67 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:20宽度:7.505 mm
Base Number Matches:1

CY22E016L-SZ25XCT 数据手册

 浏览型号CY22E016L-SZ25XCT的Datasheet PDF文件第2页浏览型号CY22E016L-SZ25XCT的Datasheet PDF文件第3页浏览型号CY22E016L-SZ25XCT的Datasheet PDF文件第4页浏览型号CY22E016L-SZ25XCT的Datasheet PDF文件第5页浏览型号CY22E016L-SZ25XCT的Datasheet PDF文件第6页浏览型号CY22E016L-SZ25XCT的Datasheet PDF文件第7页 
PRELIMINARY  
CY22E016L  
16-Kbit (2K x 8) nvSRAM  
Features  
Functional Description  
• 25 ns, 35 ns and 45 ns Access Times  
The Cypress CY22E016L is a fast static RAM with a nonvol-  
atile element incorporated in each static memory cell. The  
SRAM can be read and written an infinite number of times,  
while independent, nonvolatile data resides in Nonvolatile  
Elements. Data transfers from the SRAM to the Nonvolatile  
Elements (the STORE operation) can take place automatically  
on power down. A 68-µF or larger capacitor tied from VCAP to  
ground guarantees the STORE operation, regardless of  
power-down slew rate or loss of power from “hot swapping”.  
Transfers from the Nonvolatile Elements to the SRAM (the  
RECALL operation) take place automatically on restoration of  
power. A hardware STORE may be initiated with the HSB pin.  
• “Hands-off” Automatic STORE on Power Down with  
external 68µF capacitor  
STORE to QuantumTrap® Nonvolatile Elements is  
initiated by Hardware or Autostore®on Power-down  
RECALL to SRAM Initiated on Power-up  
• Infinite READ, WRITE and RECALL Cycles  
• 10 mA Typical ICC at 200 ns Cycle Time  
• 1,000,000 STORE Cycles to QuantumTrap  
• 100-Year Data Retention to QuantumTrap  
• Single 5V Operation +10%  
• Commercial, Industrial Temperature  
• SOIC Package  
• RoHS Compliance  
Logic Block Diagram  
V
CC  
V
CAP  
Quantum Trap  
32 X 512  
POWER  
CONTROL  
A5  
STORE  
RECALL  
A6  
A7  
A8  
STORE/  
RECALL  
CONTROL  
STATIC RAM  
ARRAY  
HSB  
32 X 512  
A9  
DQ0  
COLUMN I/O  
DQ1  
DQ2  
DQ3  
COLUMN DEC  
DQ4  
DQ5  
DQ6  
DQ7  
A0  
A4  
A10  
A1  
A3  
A2  
OE  
CE  
WE  
Cypress Semiconductor Corporation  
Document #: 001-06727 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised November 28, 2006  
[+] Feedback  

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