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CY22E016L-SZ45XIT PDF预览

CY22E016L-SZ45XIT

更新时间: 2024-11-05 04:37:55
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
14页 508K
描述
16 Kbit (2K x 8) nvSRAM

CY22E016L-SZ45XIT 数据手册

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CY22E016L  
16 Kbit (2K x 8) nvSRAM  
Features  
Functional Description  
25 ns, 35 ns and 45 ns access times  
The Cypress CY22E016L is a fast static RAM with a  
non-volatile element incorporated in each static memory cell.  
The SRAM is read and written an infinite number of times,  
while independent, non-volatile data resides in non-volatile  
elements. Data transfers from the SRAM to the non-volatile  
elements (the STORE operation) takes place automatically on  
power down. A 68 μF or larger capacitor tied from VCAP to  
ground guarantees the STORE operation, regardless of power  
down slew rate or loss of power from “hot swapping.” Transfers  
from the non-volatile elements to the SRAM (the RECALL  
operation) take place automatically on restoration of power. A  
hardware STORE is initiated with the HSB pin.  
Hands off automatic STORE on power down with external  
68 μF capacitor  
STORE to QuantumTrap™ non-volatile elements is initiated  
by hardware or AutoStore on power down  
RECALL to SRAM is initiated on power up  
Infinite READ, WRITE, and RECALL cycles  
10 mA typical ICC at 200 ns cycle time  
1,000,000 STORE cycles to QuantumTrap  
100 year data retention to QuantumTrap  
Single 5V operation +10%  
Commercial and industrial temperature  
SOIC package  
RoHS compliance  
Logic Block Diagram  
V
V
CC  
CAP  
Quantum Trap  
32 X 512  
POWER  
A5  
STORE  
CONTROL  
A6  
RECALL  
STORE/  
RECALL  
CONTROL  
STATIC RAM  
ARRAY  
32 X 512  
A7  
A8  
HSB  
A9  
DQ0  
COLUMN I/O  
DQ1  
DQ2  
DQ3  
COLUMN DEC  
DQ4  
DQ5  
DQ6  
DQ7  
A0  
A4  
A10  
A1  
A3  
A2  
OE  
CE  
WE  
Cypress Semiconductor Corporation  
Document Number: 001-06727 Rev. *D  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 1, 2007  
[+] Feedback  

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