CY22E016L-SZ35CT

更新时间： 2024-11-05 13:02:39

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
14页	508K
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中文翻译

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数据手册

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CY22E016L-SZ35CT 数据手册

CY22E016L

16 Kbit (2K x 8) nvSRAM

Features

Functional Description

■ 25 ns, 35 ns and 45 ns access times

The Cypress CY22E016L is a fast static RAM with a

non-volatile element incorporated in each static memory cell.

The SRAM is read and written an infinite number of times,

while independent, non-volatile data resides in non-volatile

elements. Data transfers from the SRAM to the non-volatile

elements (the STORE operation) takes place automatically on

power down. A 68 μF or larger capacitor tied from V_CAPto

ground guarantees the STORE operation, regardless of power

down slew rate or loss of power from “hot swapping.” Transfers

from the non-volatile elements to the SRAM (the RECALL

operation) take place automatically on restoration of power. A

hardware STORE is initiated with the HSB pin.

■ Hands off automatic STORE on power down with external

68 μF capacitor

■ STORE to QuantumTrap™ non-volatile elements is initiated

by hardware or AutoStore on power down

■ RECALL to SRAM is initiated on power up

■ Infinite READ, WRITE, and RECALL cycles

■ 10 mA typical ICC at 200 ns cycle time

■ 1,000,000 STORE cycles to QuantumTrap

■ 100 year data retention to QuantumTrap

■ Single 5V operation +10%

■ Commercial and industrial temperature

■ SOIC package

■ RoHS compliance

Logic Block Diagram

CAP

Quantum Trap

32 X 512

POWER

A₅

STORE

CONTROL

A₆

RECALL

STORE/

RECALL

CONTROL

STATIC RAM

ARRAY

32 X 512

A₇

A₈

HSB

A₉

DQ₀

COLUMN I/O

DQ₁

DQ₂

DQ₃

COLUMN DEC

DQ₄

DQ₅

DQ₆

DQ₇

A₀

A₄

A₁₀

A₁

A₃

A₂

Cypress Semiconductor Corporation

Document Number: 001-06727 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised August 1, 2007

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与CY22E016L-SZ35CT相关器件

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