Datasheet > CY14B104L_08

CY14B104L_08

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
22页	663K
描述
4-Mbit (512K x 8/256K x 16) nvSRAM

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数据手册

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CY14B104L_08 数据手册

PRELIMINARY

CY14B104L, CY14B104N

4-Mbit (512K x 8/256K x 16) nvSRAM

Features

Functional Description

■ 15 ns, 25 ns, and 45 ns access times

The Cypress CY14B104L/CY14B104N is a fast static RAM, with

a nonvolatile element in each memory cell. The memory is

■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16

(CY14B104N)

organized as 512K words of 8 bits each or 256K words of 16 bits

each. The embedded nonvolatile elements incorporate

QuantumTrap technology, producing the world’s most reliable

nonvolatile memory. The SRAM provides infinite read and write

cycles, while independent nonvolatile data resides in the highly

reliable QuantumTrap cell. Data transfers from the SRAM to the

nonvolatile elements (the STORE operation) takes place

automatically at power down. On power up, data is restored to

the SRAM (the RECALL operation) from the nonvolatile memory.

Both the STORE and RECALL operations are also available

under software control.

■ Hands off automatic STORE on power down with only a small

capacitor

■ STORE to QuantumTrap^®nonvolatile elements initiated by

software, device pin or AutoStore^®on power down

■ RECALL to SRAM initiated by software or power up

■ Infinite read, write, and recall cycles

■ 8 mA typical I_CCat 200 ns cycle time

■ 200,000 STORE cycles to QuantumTrap

■ 20 year data retention

■ Single 3V +20%, –10% operation

■ Commercial and industrial temperatures

■ FBGA and TSOP - II packages

■ RoHS compliance

Logic Block Diagram

V_CC

V_CAP

[1]

A₀- A₁₈

Address

[1]

DQ0 - DQ7

CY14B104L

CY14B104N

HSB

BHE

BLE

V_SS

Note

1. Address A - A and Data DQ0 - DQ7 for x8 configuration, Address A - A and Data DQ0 - DQ15 for x16 configuration.

Cypress Semiconductor Corporation

Document #: 001-07102 Rev. *F

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 02, 2008

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