Datasheet > CY14B104L_09

CY14B104L_09

更新时间： 2024-02-03 01:09:57

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
25页	778K
描述
4 Mbit (512K x 8/256K x 16) nvSRAM

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中文翻译

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数据手册

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CY14B104L_09 数据手册

CY14B104L, CY14B104N

4 Mbit (512K x 8/256K x 16) nvSRAM

Features

Functional Description

■ 20 ns, 25 ns, and 45 ns Access Times

The Cypress CY14B104L/CY14B104N is a fast static RAM, with

a nonvolatile element in each memory cell. The memory is

■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16

(CY14B104N)

organized as 512K bytes of 8 bits each or 256K words of 16 bits

each. The embedded nonvolatile elements incorporate

QuantumTrap technology, producing the world’s most reliable

nonvolatile memory. The SRAM provides infinite read and write

cycles, while independent nonvolatile data resides in the highly

reliable QuantumTrap cell. Data transfers from the SRAM to the

nonvolatile elements (the STORE operation) takes place

automatically at power down. On power up, data is restored to

the SRAM (the RECALL operation) from the nonvolatile memory.

Both the STORE and RECALL operations are also available

under software control.

■ Hands off Automatic STORE on power down with only a small

Capacitor

■ STORE to QuantumTrap^®nonvolatile elements initiated by

software, device pin, or AutoStore^®on power down

■ RECALL to SRAM initiated by software or power up

■ Infinite Read, Write, and Recall Cycles

■ 200,000 STORE cycles to QuantumTrap

■ 20 year data retention

■ Single 3V +20% to –10% operation

■ Commercial and Industrial Temperatures

■ 48-ball FBGA and 44/54-pin TSOP II packages

■ Pb-free and RoHS compliance

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Notes

1. Address A - A for x8 configuration and Address A - A for x16 configuration.

2. Data DQ - DQ for x8 configuration and Data DQ - DQ for x16 configuration.

3. BHE and BLE are applicable for x16 configuration only.

Cypress Semiconductor Corporation

Document #: 001-07102 Rev. *L

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised December 19, 2008

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与CY14B104L_09相关器件

型号	品牌	获取价格	描述	数据表
CY14B104LA	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA_11	CYPRESS	获取价格	4-Mbit (512 K × 8/256 K × 16) nvSRAM
CY14B104LA_1106	CYPRESS	获取价格	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times
CY14B104LA_12	CYPRESS	获取价格	4-Mbit (512 K Ã 8/256 K Ã 16) nvSRAM
CY14B104LA-BA20XC	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA20XCT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA20XI	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA20XIT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA25XC	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA25XCT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM

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