Datasheet > CY14B104LA_11

CY14B104LA_11

更新时间： 2024-02-14 14:16:33

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
24页	956K
描述
4-Mbit (512 K × 8/256 K × 16) nvSRAM

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中文翻译

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数据手册

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CY14B104LA_11 数据手册

CY14B104LA, CY14B104NA

4-Mbit (512 K × 8/256 K × 16) nvSRAM

■ Packages

Features

❐ 44-/54-pin thin small outline package (TSOP II)

❐ 48-ball fine-pitch ball grid array (FBGA)

■ 20 ns, 25 ns, and 45 ns access times

■ Internally organized as 512 K × 8 (CY14B104LA) or 256 K ×

16 (CY14B104NA)

■ Pb-free and restriction of hazardous substances (RoHS)

compliant

■ Hands off automatic STORE on power-down with only a small

capacitor

Functional Description

The Cypress CY14B104LA/CY14B104NA is a fast static RAM

(SRAM), with a nonvolatile element in each memory cell. The

memory is organized as 512 K bytes of 8 bits each or 256 K

words of 16 bits each. The embedded nonvolatile elements

incorporate QuantumTrap technology, producing the world’s

most reliable nonvolatile memory. The SRAM provides infinite

read and write cycles, while independent nonvolatile data

resides in the highly reliable QuantumTrap cell. Data transfers

from the SRAM to the nonvolatile elements (the STORE

operation) takes place automatically at power-down. On

power-up, data is restored to the SRAM (the RECALL operation)

from the nonvolatile memory. Both the STORE and RECALL

operations are also available under software control.

■ STORE to QuantumTrap nonvolatile elements initiated by

software, device pin, or AutoStore on power-down

■ RECALL to SRAM initiated by software or power-up

■ Infinite read, write, and recall cycles

■ 1 million STORE cycles to QuantumTrap

■ 20 year data retention

■ Single 3 V +20%, -10% operation

■ Industrial temperature

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Notes

1. Address A - A for ×8 configuration and Address A - A for ×16 configuration.

2. Data DQ - DQ for ×8 configuration and Data DQ - DQ for ×16 configuration.

3. BHE and BLE are applicable for ×16 configuration only.

Cypress Semiconductor Corporation

Document #: 001-49918 Rev. *H

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 18, 2011

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与CY14B104LA_11相关器件

型号	品牌	获取价格	描述	数据表
CY14B104LA_1106	CYPRESS	获取价格	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times
CY14B104LA_12	CYPRESS	获取价格	4-Mbit (512 K Ã 8/256 K Ã 16) nvSRAM
CY14B104LA-BA20XC	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA20XCT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA20XI	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA20XIT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA25XC	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA25XCT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA25XI	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA-BA25XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)

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