CXT5401E PDF预览

CXT5401E

更新时间: 2025-07-26 03:27:43
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 127K
描述
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR

CXT5401E 数据手册

 浏览型号CXT5401E的Datasheet PDF文件第2页 
TM  
Central  
CXT5401E  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CXT5401E  
is a PNP Silicon Transistor, packaged in an  
SOT-89 case, designed for general purpose  
amplifier applications requiring high breakdown  
voltage.  
MARKING CODE: FULL PART NUMBER  
FEATURES:  
SOT-89 CASE  
• High Collector Breakdown Voltage 250V  
• Low Leakage Current 50nA Max  
• Low Saturation Voltage 150mV Max @ 50mA  
• Complementary Device CXT5551E  
• SOT-89 Surface Mount Package  
APPLICATIONS:  
• General purpose switching and amplification  
Telephone applications  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
250  
220  
7.0  
V
CBO  
CEO  
EBO  
V
V
V
V
I
600  
1.2  
mA  
W
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J
-65 to +150  
104  
°C  
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
V
V
=120V  
50  
50  
50  
nA  
μA  
nA  
V
CBO  
CB  
CB  
EB  
I
=120V, T =100°C  
A
=3.0V  
CBO  
I
EBO  
BV  
I =100μA  
250  
220  
7.0  
CBO  
C
BV  
I =1.0mA  
V
CEO  
C
BV  
I =10μA  
V
EBO  
E
V
I =10mA, I =1.0mA  
100  
150  
mV  
mV  
V
CE(SAT)  
C
B
V
I =50mA, I =5.0mA  
CE(SAT)  
C B  
V
I =10mA, I =1.0mA  
1.00  
1.00  
BE(SAT)  
C
B
V
I =50mA, I =5.0mA  
V
BE(SAT)  
C
B
Enhanced Specification  
R0 (10-May 2006)  

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