Datasheet > CXT5551

CXT5551

更新时间： 2024-10-15 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	465K
描述
160V,0.6A,General Purpose NPN Bipolar Transistor

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数据手册

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CXT5551 数据手册

NPN Silicon Epitaxial Planar Transistor

CXT5551

Features



Epitaxial planar die construction

Switching and amplification in high voltage

Low current

High voltage

Mechanical Data



Case: SOT-89

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-89

Ordering Information

Part Number

Package

SOT-89

Shipping Quantity

Marking Code

1G6

CXT5551

1000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

180

160

Unit

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

0.6

Thermal Characteristics

Parameter

Power Dissipation ^*1

Symbol

P_D

Value

0.625

200

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Air ^*2

Thermal Resistance Junction-to-Case ^*2

Thermal Resistance Junction-to-Lead ^*2

Junction Temperature Range

R_θJA

R_θJC

R_θJL

T_J

°C /W

°C/W

°C

-65 ~ +150

Storage Temperature Range

Notes:

T_STG

°C

1. The data tested by surface mounted on a minimum recommended FR-4 board

2. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

STM0284A: May 2023 [2.0]

www.gmesemi.com

12 3 4

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