Datasheet > CXT5401ETR

CXT5401ETR

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	291K
描述
Power Bipolar Transistor, 600A I(C), 220V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PACKAGE-3

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CXT5401ETR 数据手册

CXT5401E

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT5401E is a

PNP Silicon Transistor, packaged in an SOT-89 case,

designed for general purpose amplifier applications

requiring high breakdown voltage.

MARKING: FULL PART NUMBER

FEATURES:

• High Collector Breakdown Voltage: 250V

• Low Leakage Current: 50nA MAX

• Low Saturation Voltage: 150mV MAX @ 50mA

• Complementary Device: CXT5551E

• SOT-89 Surface Mount Package

SOT-89 CASE

APPLICATIONS:

• General purpose switching and amplification

• Telephone applications

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

250

220

♦

CBO

CEO

7.0

EBO

Continuous Collector Current

Power Dissipation

600

1.2

Operating and Storage Junction Temperature

Thermal Resistance

-65 to +150

104

°C

J, stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=120V

CBO

=120V, T =100°C

=3.0V

CBO

EBO

I =100µA

250

220

7.0

♦

CBO

♦ ^BV

I =1.0mA

CEO

EBO

I =10µA

♦

I =10mA, I =1.0mA

100

150

♦

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

♦

C B

I =10mA, I =1.0mA

1.00

I =50mA, I =5.0mA

♦ Enhanced specification

R1 (23-February 2010)

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