Datasheet > CXK58257ATM-70L

CXK58257ATM-70L

更新时间： 2024-11-07 08:27:23

品牌	Logo	应用领域
索尼 - SONY		静态存储器光电二极管
页数	文件大小	规格书
10页	67K
描述
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.4 MM, PLASTIC, TSOP-28

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数据手册

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CXK58257ATM-70L 数据手册

-70L/10L

CXK58257ATM/AYM

-70LL/10LL

32768-word x 8-bit High Speed CMOS Static RAM

Block Diagram

Description

CXK58257ATM/AYM is a 256K-bit, 32,768-word-by-

8-bit, CMOS static RAM.

A14

A13

A12

A11

It is suitable for portable and battery back-up systems

which require extremely small packages and low

stand-by current.

V_CC

Memory

Row

Decoder

Matrix

512x512

Buffer

GND

Features

• Thin small-outline package:

CXK58257ATM:

CXK58257AYM:

8mm x 13.4mm, 28 pin TSOP

A10

(Mirror image pinout)

• Low stand-by current:

L-Version:

I/O Gate

Column

Decoder

Buffer

25µA (max.) @VCC = 5.5V, Ta = 0 to +70°C

LL-Version:

5µA (max.) @VCC = 5.5V, Ta = 0 to +70°C

• Low voltage data retention: 2.0V (min.)

I/O Buffer

• Fast access time:

(Access time)

I/O1

I/O8

CXK58257ATM/AYM-70L, -70LL

CXK58257ATM/AYM-10L, -10LL

• Single + 5V supply: 5V ± 10 %

70ns (max.)

100ns (max.)

Function

32768-word-x-8-bit static RAM

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and speciﬁcations without prior notice. This information does not convey any license by any implication

or otherwise under any patents or other rights. Application circuits shown, if any, are typical examples illustrating the operation of the devices.

Sony cannot assume responsibility for any problems arising out of the use of these circuits.

–1–

E9044A46-ST

12 3 4 5 6 7...10

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