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CXK58257AYM-70L PDF预览

CXK58257AYM-70L

更新时间: 2024-11-10 09:36:19
品牌 Logo 应用领域
索尼 - SONY 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 67K
描述
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.4 MM, PLASTIC, TSOP-28

CXK58257AYM-70L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1-R, TSSOP28,.53,22
针数:28Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.88最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:11.8 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端口数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1-R
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified反向引出线:YES
座面最大高度:1.2 mm最大待机电流:0.00001 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.05 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

CXK58257AYM-70L 数据手册

 浏览型号CXK58257AYM-70L的Datasheet PDF文件第2页浏览型号CXK58257AYM-70L的Datasheet PDF文件第3页浏览型号CXK58257AYM-70L的Datasheet PDF文件第4页浏览型号CXK58257AYM-70L的Datasheet PDF文件第5页浏览型号CXK58257AYM-70L的Datasheet PDF文件第6页浏览型号CXK58257AYM-70L的Datasheet PDF文件第7页 
-70L/10L  
CXK58257ATM/AYM  
-70LL/10LL  
32768-word x 8-bit High Speed CMOS Static RAM  
Block Diagram  
Description  
CXK58257ATM/AYM is a 256K-bit, 32,768-word-by-  
8-bit, CMOS static RAM.  
A14  
A13  
A12  
A11  
A9  
A8  
A7  
A6  
A5  
It is suitable for portable and battery back-up systems  
which require extremely small packages and low  
stand-by current.  
VCC  
Memory  
Row  
Decoder  
Matrix  
512x512  
Buffer  
GND  
Features  
• Thin small-outline package:  
CXK58257ATM:  
CXK58257AYM:  
8mm x 13.4mm, 28 pin TSOP  
8mm x 13.4mm, 28 pin TSOP  
A10  
A4  
A3  
A2  
A1  
A0  
(Mirror image pinout)  
• Low stand-by current:  
L-Version:  
I/O Gate  
Column  
Decoder  
Buffer  
Buffer  
25µA (max.) @VCC = 5.5V, Ta = 0 to +70°C  
LL-Version:  
OE  
5µA (max.) @VCC = 5.5V, Ta = 0 to +70°C  
• Low voltage data retention: 2.0V (min.)  
WE  
I/O Buffer  
• Fast access time:  
(Access time)  
CE  
I/O1  
I/O8  
CXK58257ATM/AYM-70L, -70LL  
CXK58257ATM/AYM-10L, -10LL  
• Single + 5V supply: 5V ± 10 %  
70ns (max.)  
100ns (max.)  
Function  
32768-word-x-8-bit static RAM  
Structure  
Silicon gate CMOS IC  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication  
or otherwise under any patents or other rights. Application circuits shown, if any, are typical examples illustrating the operation of the devices.  
Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
–1–  
E9044A46-ST