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CXK58257AYM-10LL PDF预览

CXK58257AYM-10LL

更新时间: 2024-11-20 14:29:35
品牌 Logo 应用领域
索尼 - SONY 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 67K
描述
Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 8 X 13.4 MM, PLASTIC, TSOP-28

CXK58257AYM-10LL 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1-R, TSSOP28,.53,22
针数:28Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.91Is Samacsys:N
最长访问时间:100 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:11.8 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1-R封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
反向引出线:YES座面最大高度:1.2 mm
最大待机电流:0.000003 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

CXK58257AYM-10LL 数据手册

 浏览型号CXK58257AYM-10LL的Datasheet PDF文件第2页浏览型号CXK58257AYM-10LL的Datasheet PDF文件第3页浏览型号CXK58257AYM-10LL的Datasheet PDF文件第4页浏览型号CXK58257AYM-10LL的Datasheet PDF文件第5页浏览型号CXK58257AYM-10LL的Datasheet PDF文件第6页浏览型号CXK58257AYM-10LL的Datasheet PDF文件第7页 
-70L/10L  
CXK58257ATM/AYM  
-70LL/10LL  
32768-word x 8-bit High Speed CMOS Static RAM  
Block Diagram  
Description  
CXK58257ATM/AYM is a 256K-bit, 32,768-word-by-  
8-bit, CMOS static RAM.  
A14  
A13  
A12  
A11  
A9  
A8  
A7  
A6  
A5  
It is suitable for portable and battery back-up systems  
which require extremely small packages and low  
stand-by current.  
VCC  
Memory  
Row  
Decoder  
Matrix  
512x512  
Buffer  
GND  
Features  
• Thin small-outline package:  
CXK58257ATM:  
CXK58257AYM:  
8mm x 13.4mm, 28 pin TSOP  
8mm x 13.4mm, 28 pin TSOP  
A10  
A4  
A3  
A2  
A1  
A0  
(Mirror image pinout)  
• Low stand-by current:  
L-Version:  
I/O Gate  
Column  
Decoder  
Buffer  
Buffer  
25µA (max.) @VCC = 5.5V, Ta = 0 to +70°C  
LL-Version:  
OE  
5µA (max.) @VCC = 5.5V, Ta = 0 to +70°C  
• Low voltage data retention: 2.0V (min.)  
WE  
I/O Buffer  
• Fast access time:  
(Access time)  
CE  
I/O1  
I/O8  
CXK58257ATM/AYM-70L, -70LL  
CXK58257ATM/AYM-10L, -10LL  
• Single + 5V supply: 5V ± 10 %  
70ns (max.)  
100ns (max.)  
Function  
32768-word-x-8-bit static RAM  
Structure  
Silicon gate CMOS IC  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication  
or otherwise under any patents or other rights. Application circuits shown, if any, are typical examples illustrating the operation of the devices.  
Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
–1–  
E9044A46-ST  

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