Datasheet > CUS10S30,H3F

CUS10S30,H3F

更新时间： 2024-09-16 21:17:51

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
5页	135K
描述
DIODE SCHOTTKY 30V 1A USC

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中文翻译

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技术参数
数据手册

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CUS10S30,H3F 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	1.52	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PDSO-G2	元件数量：	1
端子数量：	2	最高工作温度：	125 °C
最大输出电流：	1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
最大重复峰值反向电压：	30 V	表面贴装：	YES
技术：	SCHOTTKY	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

CUS10S30,H3F 数据手册

CUS10S30

Schottky Barrier Diode Silicon Epitaxial

CUS10S30

1. Applications

•

High-Speed Switching

2. Packaging and Internal Circuit

1: Cathode

2: Anode

USC

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Note

Rating

Unit

Peak reverse voltage

Reverse voltage

VRM

1.0

Average rectified current

Non-repetitive peak forward surge current

Junction temperature

(Note 1)

(Note 2)

IFSM

125



Storage temperature

Tstg

-55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)

Note 2: Measured with a 10 ms pulse.

Start of commercial production

2013-09

2014-04-07

Rev.2.0

12 3 4 5

中文翻译

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