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CUS10S30,H3F(T PDF预览

CUS10S30,H3F(T

更新时间: 2024-11-06 21:19:27
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
5页 131K
描述
Rectifier Diode

CUS10S30,H3F(T 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.7应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.45 V
JESD-30 代码:R-PDSO-G2最大非重复峰值正向电流:5 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:30 V最大反向电流:500 µA
反向测试电压:30 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUALBase Number Matches:1

CUS10S30,H3F(T 数据手册

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CUS10S30  
Schottky Barrier Diode Silicon Epitaxial  
CUS10S30  
1. Applications  
High-Speed Switching  
2. Packaging and Internal Circuit  
1: Cathode  
2: Anode  
USC  
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Symbol  
Note  
Rating  
Unit  
V
Peak reverse voltage  
Reverse voltage  
VRM  
VR  
30  
20  
1.0  
Average rectified current  
Non-repetitive peak forward surge current  
Junction temperature  
IO  
(Note 1)  
(Note 2)  
A
IFSM  
Tj  
5
125  
Storage temperature  
Tstg  
-55 to 125  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Note 2: Measured with a 10 ms pulse.  
Start of commercial production  
2013-09  
2014-04-07  
Rev.2.0  
1

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