Datasheet > CTA2N1P

CTA2N1P

更新时间： 2024-10-01 22:26:39

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	62K
描述
COMPLEX TRANSISTOR ARRAY

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中文翻译

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数据手册

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CTA2N1P 数据手册

CTA2N1P

COMPLEX TRANSISTOR ARRAY

Features

Combines MMBT4401 type transistor with BSS84 type

MOSFET

Small Surface Mount Package

PNP/N-Channel Complement Available: CTA2P1N

SOT-363

Dim

Min

0.10

1.15

2.00

Max

0.30

1.35

2.20

Mechanical Data

Case: SOT-363, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

A03

0.65 Nominal

0.30

1.80

0.40

2.20

0.10

1.00

0.40

0.25

Case material - UL Flammability Rating

Classification 94V-0

Terminal Connections: See Diagram

Marking: A03

Weight: 0.006 grams (approx.)

0.90

0.25

0.10

G_Q2

C_Q1

S_Q2

All Dimensions in mm

E_Q1

B_Q1

D_Q2

@ T_A= 25°C unless otherwise specified

Maximm Ratings, Total Device

Characteristic

Symbol

P_d

Value

150

Unit

°C/W

°C

Power Dissipation (Note 1)

R_qJA

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

833

T_j, T_STG

-55 to +150

@ T_A= 25°C unless otherwise specified

Maximum Ratings, Q1, NPN MMBT4401 NPN Transistor Element

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

600

Collector Current - Continuous

@ T_A= 25°C unless otherwise specified

Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element

Characteristic

Drain-Source Voltage

Symbol

V_DSS

V_DGR

V_GSS

I_D

Value

-50

Units

-50

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Drain Current

Continuous

-130

DS30295 Rev. A-2

1 of 3

CTA2N1P

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中文翻译

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