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CTA2P1N_2 PDF预览

CTA2P1N_2

更新时间: 2024-10-02 09:35:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
5页 232K
描述
COMPLEX TRANSISTOR ARRAY

CTA2P1N_2 数据手册

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CTA2P1N  
COMPLEX TRANSISTOR ARRAY  
Features  
A
Combines MMBT4403 type transistor with 2N7002 type  
MOSFET  
Small Surface Mount Package  
NPN/P-Channel Complement Available: CTA2N1P  
Lead Free/RoHS Compliant (Note 1)  
"Green" Device (Note 3 and 4)  
SOT-363  
Dim  
A
B
C
D
F
H
J
K
L
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
B
C
0.65 Nominal  
0.30  
1.80  
0.90  
0.25  
0.10  
0°  
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
Mechanical Data  
H
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
K
J
M
M
α
L
D
F
All Dimensions in mm  
GQ2  
SQ2  
CQ1  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
Q1  
Terminal Connections: See Diagram  
Marking Information: A80, See Page 5  
Ordering Information: See Page 5  
Weight: 0.006 grams (approximate)  
Q2  
EQ1  
BQ1  
DQ2  
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
150  
Unit  
Power Dissipation  
(Note 2)  
(Note 2)  
mW  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
833  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-40  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-40  
V
-5.0  
-600  
V
Collector Current - Continuous  
mA  
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VDSS  
Value  
60  
Units  
Drain-Source Voltage  
V
V
60  
Drain-Gate Voltage RGS 1.0MΩ  
VDGR  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
V
VGSS  
Drain Current  
(Note 2)  
Continuous  
Continuous @ 100°C  
Pulsed  
115  
73  
800  
mA  
ID  
Notes:  
1. No purposefully added lead.  
2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30296 Rev. 9 - 2  
1 of 5  
www.diodes.com  
CTA2P1N  
© Diodes Incorporated  

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