CTA2P1N

更新时间： 2024-11-24 22:26:39

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	71K
描述
COMPLEX TRANSISTOR ARRAY

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中文翻译

获取价格

技术参数
数据手册

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CTA2P1N 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.85	Is Samacsys：	N
Base Number Matches：	1

CTA2P1N 数据手册

CTA2P1N

COMPLEX TRANSISTOR ARRAY

Features

Combines MMBT4403 type transistor with 2N7002

type MOSFET

Small Surface Mount Package

NPN/P-Channel Complement Available: CTA2N1P

SOT-363

Dim

Min

0.10

1.15

2.00

Max

0.30

1.35

2.20

Mechanical Data

A80

Case: SOT-363, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

0.65 Nominal

0.30

1.80

0.40

2.20

0.10

1.00

0.40

0.25

Case material - UL Flammability Rating

Classification 94V-0

Terminal Connections: See Diagram

Marking: A80

Weight: 0.006 grams (approx.)

0.90

0.25

0.10

G_Q2

All Dimensions in mm

C_Q1

S_Q2

E_Q1

B_Q1

D_Q2

@ T = 25°C unless otherwise specified

Maximum Ratings, Total Device

Characteristic

Symbol

P_d

Value

150

Unit

°C/W

°C

Power Dissipation (Note 1)

R_qJA

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

833

T_j, T_STG

-55 to +150

@ T_A= 25°C unless otherwise specified

Maximum Ratings, Q1, MMBT4403 PNP Transistor Element

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-40

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-5.0

-600

Collector Current - Continuous

@ T_A= 25°C unless otherwise specified

Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

V_DGR

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Continuous

Pulsed

V_GSS

115

800

Drain Current (Note 1)

Continuous

Continuous @ 100°C

Pulsed

I_D

DS30296 Rev. 2 - 2

1 of 4

CTA2P1N

12 3 4

中文翻译

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