SPICE MODEL: CTA2N1P
CTA2N1P
Lead-free
COMPLEX TRANSISTOR ARRAY
Features
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·
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Combines MMBT4401 type transistor with BSS84 type MOSFET
Small Surface Mount Package
PNP/N-Channel Complement Available: CTA2P1N
Lead Free/RoHS Compliant (Note 2)
SOT-363
Dim
A
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
A
A03
H
B
Mechanical Data
C
C
B
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Case: SOT-363
D
0.65 Nominal
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
F
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
8°
H
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Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
J
K
J
M
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
K
0.90
0.25
0.10
0°
L
L
D
F
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Terminal Connections: See Diagram
Marking: A03, See Page 3
M
a
Ordering Information: See Page 3
Weight: 0.006 grams (approx.)
CQ1
GQ2
SQ2
All Dimensions in mm
Q1
Q2
EQ1
BQ1
DQ2
@ TA = 25°C unless otherwise specified
Maximum Ratings, Total Device
Characteristic
Symbol
Pd
Value
150
Unit
mW
°C/W
°C
Power Dissipation (Note 1)
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
833
Tj, TSTG
-55 to +150
@ TA = 25°C unless otherwise specified
Maximum Ratings, Q1, MMBT4401 NPN Transistor Element
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
60
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
6.0
V
Collector Current - Continuous
600
mA
@ TA = 25°C unless otherwise specified
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element
Characteristic
Drain-Source Voltage
Symbol
VDSS
VDGR
VGSS
ID
Value
-50
Units
V
-50
V
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Drain Current
Continuous
Continuous
20
V
mA
-130
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30295 Rev. 6 - 2
1 of 7
CTA2N1P
www.diodes.com
ã Diodes Incorporated