SPICE MODEL: CTA2P1N
CTA2P1N
COMPLEX TRANSISTOR ARRAY
Features
·
·
·
·
Combines MMBT4403 type transistor with 2N7002 type MOSFET
Small Surface Mount Package
NPN/P-Channel Complement Available: CTA2N1P
Lead Free/RoHS Compliant (Note 1)
SOT-363
A
Dim
A
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
B
Mechanical Data
C
B
A80
C
·
Case: SOT-363
D
0.65 Nominal
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
G
H
F
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
8°
H
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
K
M
Terminals: Solderable per MIL-STD-202, Method 208
J
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
K
0.90
0.25
0.10
0°
J
L
D
F
L
·
·
·
·
Terminal Connections: See Diagram
Marking: A80, See Page 3
M
GQ2
CQ1
SQ2
a
Ordering Information: See Page 3
Weight: 0.006 grams (approx.)
Q1
All Dimensions in mm
Q2
EQ1
BQ1
DQ2
@ T = 25°C unless otherwise specified
Maximum Ratings, Total Device
A
Characteristic
Symbol
Value
Unit
mW
°C/W
°C
Pd
Power Dissipation (Note 2)
150
833
R
qJA
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
Tj, TSTG
-55 to +150
@ TA = 25°C unless otherwise specified
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-40
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5.0
-600
V
Collector Current - Continuous
mA
@ TA = 25°C unless otherwise specified
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
VDGR
60
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
±20
±40
VGSS
V
115
73
800
Drain Current (Note 2)
Continuous
Continuous @ 100°C
Pulsed
ID
mA
Notes: 1. No purposefully added lead.
DS30296 Rev. 7 - 2
1 of 7
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CTA2P1N
ã Diodes Incorporated