生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.26 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
门极发射器阈值电压最大值: | 7 V | 门极-发射极最大电压: | 30 V |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CT25AS-8-T1 | MITSUBISHI |
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Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, MP-3, 3 PIN | |
CT25ASJ8 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 150A I(C) | TO-252 | |
CT25ASJ-8 | MITSUBISHI |
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STROBE FLASHER USE | |
CT25ASJ-8 | POWEREX |
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STROBE FLASHER USE | |
CT25ASJ-8 | RENESAS |
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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR | |
CT25ASJ-8-T1 | MITSUBISHI |
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Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, MP-3, 3 PIN | |
CT25ASJ-8-T2 | MITSUBISHI |
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Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, MP-3, 3 PIN | |
CT25M | LIGHTEL |
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Conectores SUB-D y Caperuzas | |
CT25-T | LEM |
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Current Transducers CT 25-T | |
CT-26 | BOURNS |
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Turns-Counting Dial |