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CT25ASJ-8 PDF预览

CT25ASJ-8

更新时间: 2024-09-21 06:49:51
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管
页数 文件大小 规格书
3页 51K
描述
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT25ASJ-8 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.26
外壳连接:COLLECTOR集电极-发射极最大电压:400 V
配置:SINGLE门极发射器阈值电压最大值:1.5 V
门极-发射极最大电压:6 VJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

CT25ASJ-8 数据手册

 浏览型号CT25ASJ-8的Datasheet PDF文件第2页浏览型号CT25ASJ-8的Datasheet PDF文件第3页 
To all our customers  
Regarding the change of names mentioned in the document, such as Mitsubishi  
Electric and Mitsubishi XX, to Renesas Technology Corp.  
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi  
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names  
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.  
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been  
made to the contents of the document, and these changes do not constitute any alteration to the  
contents of the document itself.  
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices  
and power devices.  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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