Datasheet > CSD86350Q5D_V01

CSD86350Q5D_V01

更新时间： 2022-10-12 16:23:04

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德州仪器 - TI		/
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描述
CSD86350Q5D Synchronous Buck NexFETâ¢ Power Block

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CSD86350Q5D_V01 数据手册

CSD86350Q5D

SLPS223A –MAY 2010–REVISED MAY 2010

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1)

T_A= 25°C (unless otherwise noted)

Parameter

Conditions

VALUE

-0.8 to 25

-8 to 10

120

UNIT

V_INto P_GND

T_Gto T_GR

Voltage range

B_Gto P_GND

Pulsed Current Rating, I_DM

Power Dissipation, P_D

Sync FET, I_D= 100A, L = 0.1mH

Control FET, I_D= 58A, L = 0.1mH

500

Avalanche Energy E_AS

°C

168

Operating Junction and Storage Temperature Range, T_J, T_STG

-55 to 150

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS

T_A= 25° (unless otherwise noted)

Parameter

Gate Drive Voltage, V_GS

Conditions

MIN

MAX

UNIT

4.5

Input Supply Voltage, V_IN

Switching Frequency, f_SW

Operating Current

C_BST= 0.1mF (min)

200

1500

kHz

Operating Temperature, T_J

125

°C

POWER BLOCK PERFORMANCE

T_A= 25° (unless otherwise noted)

Parameter

Conditions

V_IN= 12V, V_GS= 5V,

MIN

TYP

MAX

UNIT

V_OUT= 1.3V, I_OUT= 25A,

f_SW= 500kHz,

L_OUT= 0.3µH, T_J= 25ºC

(1)

Power Loss, P_LOSS

2.8

T_Gto T_GR= 0V

B_Gto P_GND= 0V

V_INQuiescent Current, I_QVIN

µA

(1) Measurement made with six 10µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across V_INto P_GNDpins and

using a high current 5V driver IC.

THERMAL INFORMATION

T_A= 25°C (unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX UNIT

(1)(2)

Junction to ambient thermal resistance (Min Cu)

102

R_qJA

(1)(2)

Junction to ambient thermal resistance (Max Cu)

°C/W

(2)

Junction to case thermal resistance (Top of package)

R_qJC

(2)

Junction to case thermal resistance (P_GNDPin)

(1) Device mounted on FR4 material with 1-inch²(6.45-cm²) Cu.

(2)

_qJCis determined with the device mounted on a 1-inch²(6.45-cm²), 2 oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch

(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 board. R_qJCis specified by design while R_qJAis determined by the user’s board

design.

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