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CS830FA9RD PDF预览

CS830FA9RD

更新时间: 2024-11-07 17:01:15
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 183K
描述
TO-220F

CS830FA9RD 数据手册

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Silicon N-Channel Power MOSFET  
R
CS830F A9RD  
General Description  
VDSS  
500  
5
V
A
CS830F A9RD, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is  
TO-220F, which accords with the RoHS standard.  
Features  
ID  
PD(TC=25)  
RDS(ON)Typ  
30  
W
1.25  
l Fast Switching  
l ESD Improved Capability  
l Low Gate Charge (Typical Data: 14.5nC)  
l Low Reverse transfer capacitances(Typical:7.5pF)  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTc= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
500  
V
A
Continuous Drain Current  
5
ID  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
3.4  
A
a1  
20  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Avalanche Energy ,Repetitive  
Avalanche Current  
200  
mJ  
mJ  
A
EAS  
a1  
30  
EAR  
a1  
2.5  
IAR  
a3  
Peak Diode Recovery dv/dt  
Power Dissipation  
5.0  
V/ns  
W
dv/dt  
30  
PD  
Derating Factor above 25°C  
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
0.24  
3000  
W/℃  
V
VESD(G-S)  
TJTstg  
TL  
15055 to 150  
300  
WUXI CHINA RESOURCES HUAJING MICROELEC TRONICS CO. , LTD.  
Page 1 of 10  
2015V01  

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