Datasheet > CS70N06A3

CS70N06A3

更新时间： 2024-11-25 17:01:27

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	712K
描述
TO-251

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CS70N06A3 数据手册

Silicon N-Channel Power MOSFET

CS70N06 A3

○

General Description：

V_DSS

CS70N06 A3, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-251, which accords with the RoHS standard.

Features：

I_D

113

7.2

R_DS(ON)Typ

mΩ

 Fast Switching



Low ON Resistance(Rdson≤10 mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（TC= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

I_D

280

I_DM

Gate-to-Source Voltage

V_GS

±20

Avalanche Energy

230

E_AS

Avalanche Current

30.4

113

I_AS

Power Dissipation

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

0.904

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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