Silicon N-Channel Power MOSFET
CS70N30 ANR
R
○
General Description:
VDSS
300
V
A
CS70N30 ANR, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3P
(N), which accords with the RoHS standard..
ID
70
250
36
PD (TC=25℃)
RDS(ON)Typ
W
mΩ
Features:
Fast Switching
Low ON Resistance(Rdson≤42m
Ω)
Low Gate Charge (Typical Data: 136.2nC)
Low Reverse transfer capacitances(Typical: 107pF)
100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of electron ballast and adaptor.
Absolute(TJ= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
300
70
Units
V
Drain-to-Source Voltage
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
A
ID
42
A
a1
280
±30
A
IDM
Gate-to-Source Voltage
VGS
V
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation TC = 25 °C
Derating Factor above 25°C
3450
5.0
250
2
mJ
V/ns
W
EAS
a3
dv/dt
PD
W/℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
TJ,Tstg
150,–55 to 150
℃
℃
300
TL
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
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2019V01