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CS70N30ANR PDF预览

CS70N30ANR

更新时间: 2024-11-25 15:18:51
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 744K
描述
TO-3P(N)

CS70N30ANR 数据手册

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Silicon N-Channel Power MOSFET  
CS70N30 ANR  
R
General Description  
VDSS  
300  
V
A
CS70N30 ANR, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is TO-3P  
N, which accords with the RoHS standard..  
ID  
70  
250  
36  
PD (TC=25)  
RDS(ON)Typ  
W
mΩ  
Features  
Fast Switching  
Low ON Resistance(Rdson42m  
)  
Low Gate Charge (Typical Data: 136.2nC)  
Low Reverse transfer capacitances(Typical: 107pF)  
100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of electron ballast and adaptor.  
AbsoluteTJ= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
300  
70  
Units  
V
Drain-to-Source Voltage  
Continuous Drain Current TC = 25 °C  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
A
ID  
42  
A
a1  
280  
±30  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation TC = 25 °C  
Derating Factor above 25°C  
3450  
5.0  
250  
2
mJ  
V/ns  
W
EAS  
a3  
dv/dt  
PD  
W/℃  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
TJTstg  
15055 to 150  
300  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  
Page 1 of 10  
2019V01  

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