Silicon N-Channel Power MOSFET
CS70N20 AKR
R
○
General Description:
VDSS
200
V
A
CS70N20 AKR, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-247, which accords with the RoHS standard.
Features:
ID
70
PD(TC=25℃)
RDS(ON)Typ
367
29.5
W
mΩ
Fast Switching
Low ON Resistance(Rdson≤35mΩ)
Low Gate Charge (Typical Data:87.4nC)
Low Reverse transfer capacitances(Typical:59pF)
100% Single Pulse avalanche energy Test
Applications:
UPS and inverter.
Absolute(TJ= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
200
V
A
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
70
ID
42
A
a1
280
A
IDM
VGS
±30
V
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
2200
mJ
V/ns
W
EAS
a3
5.0
dv/dt
Power Dissipation TC = 25 °C
Derating Factor above 25°C
367
PD
2.9
150,–55 to 150
300
W/℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
TJ,Tstg
TL
℃
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2018V01