Datasheet > CS70N30AKR-G

CS70N30AKR-G

更新时间： 2024-03-03 10:11:42

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	415K
描述
TO-247

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CS70N30AKR-G 数据手册

Silicon N-Channel Power MOSFET

CS70N30 AKR-G

○

General Description：

V_DSS

300

CS70N30 AKR-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-247,

which accords with the RoHS standard..

I_D

250

P_D(T_C=25℃)

R_DS(ON)Typ

mΩ

Features：

l Fast Switching

l Low ON Resistance(Rdson≤42mΩ)

l Low Gate Charge (Typical Data: 136.2nC)

l Low Reverse transfer capacitances(Typical: 107pF)

l 100% Single Pulse avalanche energy Test

l Halogen Free

Applications：

Power switch circuit of electron ballast and adaptor.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

300

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

I_D

280

±30

I_DM

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation T_C= 25 °C

3450

5.0

V/ns

E_AS

dv/dt

250

P_D

Derating Factor above 25°C

150，–55 to 150

300

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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